New high-rate sputtering-type electron cyclotron resonance microwave plasma using an electric mirror

Journal Article · Mon Apr 24 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101310· OSTI ID:6410622

Matsuoka, M; Ono, K

High-rate sputtering is achieved by means of new electron cyclotron resonance microwave plasma employing sputtering using an electric mirror. This apparatus consists of both planar and cylindrical targets. Microwave power is perpendicularly or obliquely introduced into the resonance chamber. High-density plasma of 10/sup 12/ cm/sup -3/ is generated. The reflected electrons oscillating between the two targets play a major role in generating the dense plasma, i.e., as a beam-plasma interaction. Both insulator and conductor films can be continuously deposited by this sputtering method at high rates under low gas pressures of 10/sup -2/ Pa. Al, Mo, and Fe films are deposited at rates above 2000 A/min.

• Research Organization: NTT Opto-electronics Laboratories, Tokai, Ibaraki 319-11, Japan
• OSTI ID: 6410622
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:17
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
SPUTTERING
IRON
MOLYBDENUM
PLASMA
ELECTRON CYCLOTRON-RESONANCE
LOW PRESSURE
PLASMA DENSITY
PLASMA PRODUCTION
THIN FILMS
CYCLOTRON RESONANCE
ELEMENTS
FILMS
METALS
RESONANCE
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication