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Title: Performance and stability of Si:H p[endash]i[endash]n solar cells with [ital i] layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary

Abstract

Systematic studies have been carried out on the transition from the amorphous to the microcrystalline phase in intrinsic Si:H as a function of the accumulated film thickness and the effect of this transition on p[endash]i[endash]n solar cell performance [J. Koh, Y. Lee, H. Fujiwara, C. R. Wronski, and R. W. Collins, Appl. Phys. Lett. [bold 73], 1526 (1998)]. Guided by a deposition phase diagram obtained from real-time spectroscopic ellipsometry, cell structures having [ital i] layers deposited with different H[sub 2]-dilution levels and thicknesses were investigated. For these structures, the fill factors are controlled by the bulk [ital i] layers. From the systematic changes in the fill factors, specifically their initial and degraded steady-state values and their degradation kinetics, the effects of the transition from the amorphous to the microcrystalline phase within the Si:H layers are identified, and insights are obtained into the properties of these structurally graded materials. [copyright] [ital 1999 American Institute of Physics.]

Authors:
; ; ; ; ;  [1]
  1. (Center for Thin Film Devices, Electrical Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States))
Publication Date:
OSTI Identifier:
6407144
Alternate Identifier(s):
OSTI ID: 6407144
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75:11; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; AMORPHOUS STATE; CRYSTALLIZATION; ELLIPSOMETRY; HYDROGEN; HYDROGEN ADDITIONS; P-N JUNCTIONS; PHASE DIAGRAMS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; STABILITY; THIN FILMS; DIAGRAMS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FILMS; MEASURING METHODS; NONMETALS; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SOLAR EQUIPMENT 140501* -- Solar Energy Conversion-- Photovoltaic Conversion

Citation Formats

Koval, R.J., Koh, J., Lu, Z., Jiao, L., Collins, R.W., and Wronski, C.R. Performance and stability of Si:H p[endash]i[endash]n solar cells with [ital i] layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary. United States: N. p., 1999. Web. doi:10.1063/1.124752.
Koval, R.J., Koh, J., Lu, Z., Jiao, L., Collins, R.W., & Wronski, C.R. Performance and stability of Si:H p[endash]i[endash]n solar cells with [ital i] layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary. United States. doi:10.1063/1.124752.
Koval, R.J., Koh, J., Lu, Z., Jiao, L., Collins, R.W., and Wronski, C.R. Wed . "Performance and stability of Si:H p[endash]i[endash]n solar cells with [ital i] layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary". United States. doi:10.1063/1.124752.
@article{osti_6407144,
title = {Performance and stability of Si:H p[endash]i[endash]n solar cells with [ital i] layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary},
author = {Koval, R.J. and Koh, J. and Lu, Z. and Jiao, L. and Collins, R.W. and Wronski, C.R.},
abstractNote = {Systematic studies have been carried out on the transition from the amorphous to the microcrystalline phase in intrinsic Si:H as a function of the accumulated film thickness and the effect of this transition on p[endash]i[endash]n solar cell performance [J. Koh, Y. Lee, H. Fujiwara, C. R. Wronski, and R. W. Collins, Appl. Phys. Lett. [bold 73], 1526 (1998)]. Guided by a deposition phase diagram obtained from real-time spectroscopic ellipsometry, cell structures having [ital i] layers deposited with different H[sub 2]-dilution levels and thicknesses were investigated. For these structures, the fill factors are controlled by the bulk [ital i] layers. From the systematic changes in the fill factors, specifically their initial and degraded steady-state values and their degradation kinetics, the effects of the transition from the amorphous to the microcrystalline phase within the Si:H layers are identified, and insights are obtained into the properties of these structurally graded materials. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.124752},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = ,
volume = 75:11,
place = {United States},
year = {1999},
month = {9}
}