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Title: Optical and structural properties of molecular-beam epitaxial GaAs on sapphire

Abstract

We have evaluated the structural and optical properties of GaAs grown by molecular-beam epitaxy on (0001) and (011-bar2)-oriented sapphire substrates for possible direct deposition on sapphire optical fibers and optoelectronic device applications. X-ray diffraction studies and cross-sectional transmission electron microscopy measurements show that the GaAs films are single-crystal and have a (111) orientation for both substrate orientations. Both x-ray and temperature-dependent photoluminescence measurements indicate that the quality of the GaAs films is better for the (011-bar2) sapphire orientation. The best results are produced when growth is initiated at a very slow rate (/similar to/0.1 ..mu..m/h) and low temperature (/similar to/400 /sup 0/C) followed by growth parameters for normal homoepitaxial GaAs (1 ..mu..m/h, 560--600 /sup 0/C). The incorporation of a graded band gap strained layer in InGaAs/GaAs superlattice near the sapphire--GaAs interface also improves the optical quality of the GaAs films. Low-temperature photoluminescence spectra is dominated by a peak at 1.49--1.495 eV, with a best linewidth of 26.9 meV, which we believe is due to an integration of several impurity and defect related bound exciton transitions. A peak to lower energies by /similar to/60 meV is thought to be due to acceptorlike impurity defect complexes. Post growth short term halogen lampmore » annealing marginally improves the overall luminescence intensity of the samples. A linewidth of 20 meV is measured for a (80 A) GaAs/(120 A) Al/sub 0.3/ Ga/sub 0.7/ As multiquantum grown on sapphire.« less

Authors:
; ; ;
Publication Date:
Research Org.:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122
OSTI Identifier:
6406743
Resource Type:
Journal Article
Journal Name:
J. Vac. Sci. Technol., B; (United States)
Additional Journal Information:
Journal Volume: 7:2
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; ORIENTATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY GAP; EXCITONS; HIGH TEMPERATURE; MONOCRYSTALS; OPTICAL FIBERS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; USES; X-RAY DIFFRACTION; ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COHERENT SCATTERING; CORUNDUM; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; FIBERS; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; QUASI PARTICLES; SCATTERING; 360602* - Other Materials- Structure & Phase Studies; 360603 - Materials- Properties

Citation Formats

Chin, A, Bhattacharya, P, Chang, K H, and Biswas, D. Optical and structural properties of molecular-beam epitaxial GaAs on sapphire. United States: N. p., 1989. Web. doi:10.1116/1.584734.
Chin, A, Bhattacharya, P, Chang, K H, & Biswas, D. Optical and structural properties of molecular-beam epitaxial GaAs on sapphire. United States. https://doi.org/10.1116/1.584734
Chin, A, Bhattacharya, P, Chang, K H, and Biswas, D. Wed . "Optical and structural properties of molecular-beam epitaxial GaAs on sapphire". United States. https://doi.org/10.1116/1.584734.
@article{osti_6406743,
title = {Optical and structural properties of molecular-beam epitaxial GaAs on sapphire},
author = {Chin, A and Bhattacharya, P and Chang, K H and Biswas, D},
abstractNote = {We have evaluated the structural and optical properties of GaAs grown by molecular-beam epitaxy on (0001) and (011-bar2)-oriented sapphire substrates for possible direct deposition on sapphire optical fibers and optoelectronic device applications. X-ray diffraction studies and cross-sectional transmission electron microscopy measurements show that the GaAs films are single-crystal and have a (111) orientation for both substrate orientations. Both x-ray and temperature-dependent photoluminescence measurements indicate that the quality of the GaAs films is better for the (011-bar2) sapphire orientation. The best results are produced when growth is initiated at a very slow rate (/similar to/0.1 ..mu..m/h) and low temperature (/similar to/400 /sup 0/C) followed by growth parameters for normal homoepitaxial GaAs (1 ..mu..m/h, 560--600 /sup 0/C). The incorporation of a graded band gap strained layer in InGaAs/GaAs superlattice near the sapphire--GaAs interface also improves the optical quality of the GaAs films. Low-temperature photoluminescence spectra is dominated by a peak at 1.49--1.495 eV, with a best linewidth of 26.9 meV, which we believe is due to an integration of several impurity and defect related bound exciton transitions. A peak to lower energies by /similar to/60 meV is thought to be due to acceptorlike impurity defect complexes. Post growth short term halogen lamp annealing marginally improves the overall luminescence intensity of the samples. A linewidth of 20 meV is measured for a (80 A) GaAs/(120 A) Al/sub 0.3/ Ga/sub 0.7/ As multiquantum grown on sapphire.},
doi = {10.1116/1.584734},
url = {https://www.osti.gov/biblio/6406743}, journal = {J. Vac. Sci. Technol., B; (United States)},
number = ,
volume = 7:2,
place = {United States},
year = {1989},
month = {3}
}