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Title: Silicon-ingot casting: heat-exchanger method (HEM); multi-wire slicing: fixed-abrasive slicing technique (FAST). Phase III and Phase IV. Silicon sheet-growth development for the large-area sheet task of the Low-Cost Solar-Array Project. Final report, December 15, 1978-June 30, 1981

Technical Report ·
DOI:https://doi.org/10.2172/6396141· OSTI ID:6396141

It has been demonstrated that directional solidification by the Heat Exchanger method (HEM) is a viable approach for directional solidification of silicon ingots to be used for terrestrial solar cell applications. Some of the significant advances made during this phase of the program are listed. Some of the problems encountered have been growth rate decrease with increased ingot height, silicon carbide precipitates, and high dislocation density in HEM material. The silicon carbide is attributed to backstreaming of oil vapors from the vacuum pump; the high dislocation density is associated with the thermal history of the boule. Using solar metallurgical meltstock nearly single crystal structure has been achieved with one HEM directional solidification. Solar cells fabricated using this meltstock have shown up to 12.33% conversion efficiency. The projected add-on cost of HEM processing using the best simultaneous achievements is $17.39/m/sup 2/ - well within the allocation of $18.15/m/sup 2/ for 1986 goals.

Research Organization:
Crystal Systems, Inc., Salem, MA (USA)
DOE Contract Number:
NAS-7-100-954373
OSTI ID:
6396141
Report Number(s):
DOE/JPL/954373-81/19; ON: DE83007035
Resource Relation:
Other Information: 4
Country of Publication:
United States
Language:
English