Preparation of p-type indium phosphide films by close space vapor transport
InP films have been grown by close space transport employing 0.8 mol% PCl/sub 3/ in H/sub 2/. For deposition on InP single crystals, 700/sup 0/C source and 650/sup 0/C substrate temperatures produced epitaxial films on (100), polycrystalline films on (111)A, and powdery layers on (111)B. Growth rates are 6 to 10 ..mu..m/h on (100)InP and approx. 50 ..mu..m/h on (111)A InP. Regardless of InP source doping, deposits exhibit net donor concentrations of 5 x 10/sup 17/ to 1 x 10/sup 18/ cm/sup -3/. Zn doping with 0.02 to 0.5 mol% Zn(C/sub 2/H/sub 5/)/sub 2/ in the gas phase resulted in partially compensated p-InP with net acceptor concentrations up to 7 x 10/sup 18/ cm/sup -3/. Polycrystalline films have been grown on Mg-coated carbon or molybdenum substrates at 700/sup 0/C source and 590/sup 0/C substrate temperatures. Growth rates lie between 40 and 50 ..mu..m/h. Substantial recrystallization and grain growth are observed after 2 day anneals at 950/sup 0/C under 5 atm of phosphorus.
- Research Organization:
- Bell Labs., Holmdel, NJ
- OSTI ID:
- 6393108
- Journal Information:
- Mater. Res. Bull.; (United States), Vol. 13:12
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
INDIUM PHOSPHIDES
CRYSTAL GROWTH
PHOTOVOLTAIC CELLS
FABRICATION
PERFORMANCE
CARBON
DOPED MATERIALS
FILMS
GRAIN SIZE
MOLYBDENUM
PHOTOVOLTAIC CONVERSION
RECRYSTALLIZATION
SOLAR CELLS
SUBSTRATES
VAPOR DEPOSITED COATINGS
ZINC
COATINGS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
INDIUM COMPOUNDS
METALS
MICROSTRUCTURE
NONMETALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PNICTIDES
REFRACTORY METALS
SIZE
TRANSITION ELEMENTS
360301* - Composite Materials- Preparation & Fabrication- (-1987)
140501 - Solar Energy Conversion- Photovoltaic Conversion