Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first JPN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell. Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields. This latter feature also minimizes losses caused by the crystal defects associated with the interface between two semiconductors.
- Assignee:
- Hughes Aircraft Co.
- Patent Number(s):
- US 4128733
- OSTI ID:
- 6392673
- Resource Relation:
- Patent File Date: Filed date 27 Dec 1977
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
GRADED BAND GAPS
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
GERMANIUM
P-N JUNCTIONS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
ELEMENTS
GALLIUM COMPOUNDS
JUNCTIONS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion