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Title: Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy

Abstract

Epitaxial GaAs/Ge films are grown by molecular beam epitaxy (MBE) on Si substrates. The effect of various MBE growth conditions on the sample morphology, the defect density, and the optical properties of GaAs and Ge epilayers is examined. Scanning electron microscopy, plan-view and cross-sectional transmission electron microscopy, reflection high-energy electron diffraction, and photoluminescence are used to characterize epitaxial layers. It is found that the defect density decreases with increasing epilayer thickness. This is due to an annihilation process that affects both threading dislocations and stacking faults. The substrate temperature during Ge growth is found to affect the properties of both the Ge and GaAs films. GaAs surface morphology degrades and the stacking fault density increases at high Ge buffer-layer substrate temperatures; however, the threading dislocation density remains unchanged. Variations in growth conditions are correlated with defect densities and luminescence efficiencies to determine material quality and optimize growth conditions.

Authors:
; ; ;
Publication Date:
Research Org.:
Solar Energy Research Institute, Golden, Colorado 80401
OSTI Identifier:
6392238
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 58:11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; GALLIUM ARSENIDES; CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; GERMANIUM; SILICON; VAPOR DEPOSITED COATINGS; CRYSTAL STRUCTURE; DISLOCATIONS; EFFICIENCY; ELECTRON DIFFRACTION; LUMINESCENCE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; ARSENIC COMPOUNDS; ARSENIDES; COATINGS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; LINE DEFECTS; METALS; MICROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMIMETALS; 360601* - Other Materials- Preparation & Manufacture; 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Sheldon, P, Yacobi, B G, Jones, K M, and Dunlavy, D J. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy. United States: N. p., 1985. Web. doi:10.1063/1.335551.
Sheldon, P, Yacobi, B G, Jones, K M, & Dunlavy, D J. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy. United States. doi:10.1063/1.335551.
Sheldon, P, Yacobi, B G, Jones, K M, and Dunlavy, D J. Sun . "Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy". United States. doi:10.1063/1.335551.
@article{osti_6392238,
title = {Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy},
author = {Sheldon, P and Yacobi, B G and Jones, K M and Dunlavy, D J},
abstractNote = {Epitaxial GaAs/Ge films are grown by molecular beam epitaxy (MBE) on Si substrates. The effect of various MBE growth conditions on the sample morphology, the defect density, and the optical properties of GaAs and Ge epilayers is examined. Scanning electron microscopy, plan-view and cross-sectional transmission electron microscopy, reflection high-energy electron diffraction, and photoluminescence are used to characterize epitaxial layers. It is found that the defect density decreases with increasing epilayer thickness. This is due to an annihilation process that affects both threading dislocations and stacking faults. The substrate temperature during Ge growth is found to affect the properties of both the Ge and GaAs films. GaAs surface morphology degrades and the stacking fault density increases at high Ge buffer-layer substrate temperatures; however, the threading dislocation density remains unchanged. Variations in growth conditions are correlated with defect densities and luminescence efficiencies to determine material quality and optimize growth conditions.},
doi = {10.1063/1.335551},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 58:11,
place = {United States},
year = {1985},
month = {12}
}