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Title: Bragg{endash}Fresnel optics for hard x-ray microscopy: Development of fabrication process and x-ray characterization at the Advanced Photon Source

Abstract

Results are presented on development of processes for fabricating linear and circular Bragg{endash}Fresnel lenses (BFLs) on Si and III{endash}V compound material substrates, and on x-ray characterization of linear BFLs at the Advanced Photon Source (APS). Processes were developed for fabricating long (zone length {gt}5 mm) linear BFLs on Si with enhanced capability for focusing high-energy x rays. By stitching together 20 sequentially exposed 400-{mu}m-long linear BFLs, we were able to fabricate 8-mm-long linear BFLs with 0.5-{mu}m finest zone width. BFLs were also fabricated on III{endash}V compound semiconductor substrates GaAs and InP, with improved process control due to the substantially reduced zone thickness required ({approximately}50{percent} less than Si). Reduction of the zone aspect ratio (thickness/width) lessens the demand on the process technology, and may lead to higher lens resolution and pattern transfer accuracy. A process was explored to fabricate BFLs on a GaAs/AlGaAs heterostructure incorporating a built-in {open_quotes}etch stop{close_quotes} layer to ensure uniform zone thickness. Experimental characterization of the focusing properties of a field-stitched 8-mm-long linear BFL on Si (zone aperture=150 {mu}m) was conducted at APS undulator beamline 1-ID-C using 10-keV x rays. Based on measured focal plane intensity distribution, the focus was estimated to be 1.2 {mu}m, comparable to themore » geometrically demagnified source size of {approximately}1 {mu}m. Lens efficiency was estimated to be {approximately}30{percent}. Work is underway to incorporate the BFL-microprobe in x-ray microdiffraction and fluorescence microscopy experiments to study spatially confined complex materials. {copyright} {ital 1998 American Institute of Physics.}« less

Authors:
; ;  [1]; ;  [2]; ; ;  [3]
  1. Materials Research Laboratory, Materials Department and Physics Department, University of California, Santa Barbara, California 93106 (United States)
  2. National Nanofabrication Users Network (NNUN), Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)
  3. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Publication Date:
OSTI Identifier:
639205
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 69; Journal Issue: 8; Other Information: PBD: Aug 1998
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; LENSES; SUBSTRATES; SILICON; ALUMINIUM COMPOUNDS; X-RAY SOURCES; FRESNEL LENS; FABRICATION; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; EFFICIENCY; SYNCHROTRON RADIATION; SYNCHROTRON RADIATION SOURCES

Citation Formats

Li, Y, Wong, G C, Safinya, C R, Caine, E, Hu, E L, Haeffner, D, Fernandez, P, and Yun, W. Bragg{endash}Fresnel optics for hard x-ray microscopy: Development of fabrication process and x-ray characterization at the Advanced Photon Source. United States: N. p., 1998. Web. doi:10.1063/1.1149022.
Li, Y, Wong, G C, Safinya, C R, Caine, E, Hu, E L, Haeffner, D, Fernandez, P, & Yun, W. Bragg{endash}Fresnel optics for hard x-ray microscopy: Development of fabrication process and x-ray characterization at the Advanced Photon Source. United States. https://doi.org/10.1063/1.1149022
Li, Y, Wong, G C, Safinya, C R, Caine, E, Hu, E L, Haeffner, D, Fernandez, P, and Yun, W. Sat . "Bragg{endash}Fresnel optics for hard x-ray microscopy: Development of fabrication process and x-ray characterization at the Advanced Photon Source". United States. https://doi.org/10.1063/1.1149022.
@article{osti_639205,
title = {Bragg{endash}Fresnel optics for hard x-ray microscopy: Development of fabrication process and x-ray characterization at the Advanced Photon Source},
author = {Li, Y and Wong, G C and Safinya, C R and Caine, E and Hu, E L and Haeffner, D and Fernandez, P and Yun, W},
abstractNote = {Results are presented on development of processes for fabricating linear and circular Bragg{endash}Fresnel lenses (BFLs) on Si and III{endash}V compound material substrates, and on x-ray characterization of linear BFLs at the Advanced Photon Source (APS). Processes were developed for fabricating long (zone length {gt}5 mm) linear BFLs on Si with enhanced capability for focusing high-energy x rays. By stitching together 20 sequentially exposed 400-{mu}m-long linear BFLs, we were able to fabricate 8-mm-long linear BFLs with 0.5-{mu}m finest zone width. BFLs were also fabricated on III{endash}V compound semiconductor substrates GaAs and InP, with improved process control due to the substantially reduced zone thickness required ({approximately}50{percent} less than Si). Reduction of the zone aspect ratio (thickness/width) lessens the demand on the process technology, and may lead to higher lens resolution and pattern transfer accuracy. A process was explored to fabricate BFLs on a GaAs/AlGaAs heterostructure incorporating a built-in {open_quotes}etch stop{close_quotes} layer to ensure uniform zone thickness. Experimental characterization of the focusing properties of a field-stitched 8-mm-long linear BFL on Si (zone aperture=150 {mu}m) was conducted at APS undulator beamline 1-ID-C using 10-keV x rays. Based on measured focal plane intensity distribution, the focus was estimated to be 1.2 {mu}m, comparable to the geometrically demagnified source size of {approximately}1 {mu}m. Lens efficiency was estimated to be {approximately}30{percent}. Work is underway to incorporate the BFL-microprobe in x-ray microdiffraction and fluorescence microscopy experiments to study spatially confined complex materials. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.1149022},
url = {https://www.osti.gov/biblio/639205}, journal = {Review of Scientific Instruments},
number = 8,
volume = 69,
place = {United States},
year = {1998},
month = {8}
}