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Title: Broad-beam, high current, metal ion implantation facility

Abstract

We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (USA)
Sponsoring Org.:
USDOD; DOE/ER
OSTI Identifier:
6391256
Report Number(s):
LBL-28685; CONF-900722-1
ON: DE91009329; CNN: ARO-116-89; N00014-88-F-0093; TRN: 91-006722
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: 8. international conference on ion implantation technology, Guildford (UK), 30 Jul - 3 Aug 1990
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; METALS; ION IMPLANTATION; BEAM CURRENTS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ION SOURCES; PALLADIUM IONS; SILICON; TITANIUM IONS; TUNGSTEN IONS; CHARGED PARTICLES; CHEMICAL COATING; CURRENTS; DEPOSITION; ELEMENTS; IONS; SEMIMETALS; SURFACE COATING; 656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-); 640301 - Atomic, Molecular & Chemical Physics- Beams & their Reactions

Citation Formats

Brown, I G, Dickinson, M R, Galvin, J E, Godechot, X, and MacGill, R A. Broad-beam, high current, metal ion implantation facility. United States: N. p., 1990. Web.
Brown, I G, Dickinson, M R, Galvin, J E, Godechot, X, & MacGill, R A. Broad-beam, high current, metal ion implantation facility. United States.
Brown, I G, Dickinson, M R, Galvin, J E, Godechot, X, and MacGill, R A. 1990. "Broad-beam, high current, metal ion implantation facility". United States. https://www.osti.gov/servlets/purl/6391256.
@article{osti_6391256,
title = {Broad-beam, high current, metal ion implantation facility},
author = {Brown, I G and Dickinson, M R and Galvin, J E and Godechot, X and MacGill, R A},
abstractNote = {We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs.},
doi = {},
url = {https://www.osti.gov/biblio/6391256}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {7}
}

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