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Title: Formation of defects in silicon due to multiple ion irradiation

Abstract

The secondary-emission method was used to study the distributions of structure defects in p-type silicon subjected to separate and consecutive irradiation with the light ions B/sup +/ and N/sup +/. The number of defects in moderately damaged crystals increased superlinearly with the dose. A study of the accumulation of stable defects as a result of various irradiations near room temperature established that this occurred more effectively in those parts of a crystal where the number of atoms displaced from equilibrium positions exceeded approx.25%. A spatial redistribution of defects (nonadditivity of multiple irradiation) could occur. The irradiation-induced changes in the properties of the matrix had to be allowed for to obtain a complete picture of the damage caused. The experimental data on multiple irradiation with ions of different kinds (B/sup +/ and N/sup +/ of 50 keV energy) and different energies (N/sup +/ of energies 50 and 100 keV) indicated that the most probable reason for the effective damage to the structure was the growth of separate strongly disturbed zones by the capture of mobile defects.

Authors:
; ;
Publication Date:
Research Org.:
M. I. Kalinin Polytechnic Institute, Leningrad
OSTI Identifier:
6388937
Alternate Identifier(s):
OSTI ID: 6388937
Resource Type:
Journal Article
Journal Name:
Sov. Phys. - Semicond. (Engl. Transl.); (United States)
Additional Journal Information:
Journal Volume: 13:2
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; PHYSICAL RADIATION EFFECTS; BORON IONS; CRYSTAL DEFECTS; ION COLLISIONS; NITROGEN IONS; SPATIAL DISTRIBUTION; ATOMIC IONS; CHARGED PARTICLES; COLLISIONS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; IONS; RADIATION EFFECTS; SEMIMETALS 360605* -- Materials-- Radiation Effects

Citation Formats

Abroyan, I.A., Titov, A.I., and Khlebalkin, A.V. Formation of defects in silicon due to multiple ion irradiation. United States: N. p., 1979. Web.
Abroyan, I.A., Titov, A.I., & Khlebalkin, A.V. Formation of defects in silicon due to multiple ion irradiation. United States.
Abroyan, I.A., Titov, A.I., and Khlebalkin, A.V. Thu . "Formation of defects in silicon due to multiple ion irradiation". United States.
@article{osti_6388937,
title = {Formation of defects in silicon due to multiple ion irradiation},
author = {Abroyan, I.A. and Titov, A.I. and Khlebalkin, A.V.},
abstractNote = {The secondary-emission method was used to study the distributions of structure defects in p-type silicon subjected to separate and consecutive irradiation with the light ions B/sup +/ and N/sup +/. The number of defects in moderately damaged crystals increased superlinearly with the dose. A study of the accumulation of stable defects as a result of various irradiations near room temperature established that this occurred more effectively in those parts of a crystal where the number of atoms displaced from equilibrium positions exceeded approx.25%. A spatial redistribution of defects (nonadditivity of multiple irradiation) could occur. The irradiation-induced changes in the properties of the matrix had to be allowed for to obtain a complete picture of the damage caused. The experimental data on multiple irradiation with ions of different kinds (B/sup +/ and N/sup +/ of 50 keV energy) and different energies (N/sup +/ of energies 50 and 100 keV) indicated that the most probable reason for the effective damage to the structure was the growth of separate strongly disturbed zones by the capture of mobile defects.},
doi = {},
journal = {Sov. Phys. - Semicond. (Engl. Transl.); (United States)},
number = ,
volume = 13:2,
place = {United States},
year = {1979},
month = {2}
}