Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O{sub 3} capacitors directly on silicon

doi:https://doi.org/10.1063/1.368112

Title: Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O{sub 3} capacitors directly on silicon

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Abstract

A two-step process consisting of low temperature growth followed by rapid thermal annealing is demonstrated for Ru/(Pb,La)(Zr,Ti)O{sub 3} (PLZT)/Ru ferroelectric capacitors directly on silicon. PLZT is a promising material for Gbit-scale ferroelectric memories, but its growth on silicon has proved challenging. The two-step process is designed to enable nucleation of perovskite phase PLZT while limiting diffusion which often leads to device failure. Minimization of stress and interdiffusion during film growth were necessary to optimize the remanent polarization. (Pb-4{percent}La)(Zr{sub 0.3}Ti{sub 0.7})O{sub 3} capacitors with remanent polarizations up to 17thinsp{mu}C/cm{sup 2} were grown on Ru/Si at 400thinsp{degree}C and 50 mTorr O{sub 2} using pulsed laser deposition. Direct high temperature growth ({gt}600thinsp{degree}C) was not possible due to interface reactions, and film cracking was observed at low temperatures as well as at high and low oxygen pressures. {copyright} {ital 1998 American Institute of Physics.}

Authors:

Bandaru, J; Sands, T; Tsakalakos, L ^[1]

Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

Publication Date:: 1998-07-01

OSTI Identifier:: 638747

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 84; Journal Issue: 2; Other Information: PBD: Jul 1998

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; LEAD COMPOUNDS; LANTHANUM COMPOUNDS; PZT; CAPACITORS; RUTHENIUM; FERROELECTRIC MATERIALS; ELECTRODES; LANTHANUM ADDITIONS; STRESSES; POLARIZATION; DIFFUSION; MEMORY DEVICES

Citation Formats


                    Bandaru, J, Sands, T, and Tsakalakos, L. Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O{sub 3} capacitors directly on silicon.  United States: N. p., 1998. 
        Web.  doi:10.1063/1.368112.

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                    Bandaru, J, Sands, T, & Tsakalakos, L. Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O{sub 3} capacitors directly on silicon.  United States.  https://doi.org/10.1063/1.368112

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                    Bandaru, J, Sands, T, and Tsakalakos, L. Wed .  
        "Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O{sub 3} capacitors directly on silicon".  United States.  https://doi.org/10.1063/1.368112.

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@article{osti_638747,

  title        = {Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O{sub 3} capacitors directly on silicon},

  author       = {Bandaru, J and Sands, T and Tsakalakos, L},

  abstractNote = {A two-step process consisting of low temperature growth followed by rapid thermal annealing is demonstrated for Ru/(Pb,La)(Zr,Ti)O{sub 3} (PLZT)/Ru ferroelectric capacitors directly on silicon. PLZT is a promising material for Gbit-scale ferroelectric memories, but its growth on silicon has proved challenging. The two-step process is designed to enable nucleation of perovskite phase PLZT while limiting diffusion which often leads to device failure. Minimization of stress and interdiffusion during film growth were necessary to optimize the remanent polarization. (Pb-4{percent}La)(Zr{sub 0.3}Ti{sub 0.7})O{sub 3} capacitors with remanent polarizations up to 17thinsp{mu}C/cm{sup 2} were grown on Ru/Si at 400thinsp{degree}C and 50 mTorr O{sub 2} using pulsed laser deposition. Direct high temperature growth ({gt}600thinsp{degree}C) was not possible due to interface reactions, and film cracking was observed at low temperatures as well as at high and low oxygen pressures. {copyright} {ital 1998 American Institute of Physics.}},

  doi          = {10.1063/1.368112},

  url          = {https://www.osti.gov/biblio/638747},
  journal      = {Journal of Applied Physics},
number       = 2,

  volume       = 84,

  place        = {United States},

  year         = {1998},

  month        = {7}

}

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