A method of increasing minority carrier lifetime in silicon web or the like

Technical Report · Mon Mar 01 00:00:00 EST 1982

OSTI ID:6386258

Liu, J K; Schwuttke, G H; Koliwad, K M

A silicon dendrite is grown as a ribbon forming two silicon layers which are separated by an interface layer which contains a certain large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers are achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen, or an inert gas, for about 30 minutes to several hours, at a temperature preferably on the order of 900 to 1200 C.

• Research Organization: Jet Propulsion Lab., Pasadena, CA (USA)
• OSTI ID: 6386258
• Report Number(s): NASA-CASE-NPO-15530-1; TRN: 83-006098
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CARRIER LIFETIME
ANNEALING
CARRIERS
DENDRITES
DENDRITIC WEB GROWTH METHOD
SEMICONDUCTOR DEVICES
SOLAR CELLS
VERY HIGH TEMPERATURE
CRYSTAL GROWTH METHODS
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
LIFETIME
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR EQUIPMENT
360601* - Other Materials- Preparation & Manufacture