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Title: Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma cvd technique which is employed in a selective oxidation process

Abstract

A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.

Inventors:
;
Publication Date:
OSTI Identifier:
6381843
Patent Number(s):
US 4363868
Assignee:
Fujitsu Ltd (Japan)
Resource Type:
Patent
Resource Relation:
Patent Priority Date: Priority date 26 Dec 1979, Japan; Other Information: PAT-APPL-219494
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR DEVICES; FABRICATION; SILICON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ETCHING; NITRIDES; OXIDATION; OXIDES; PLASMA; SUBSTRATES; CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; SURFACE COATING; SURFACE FINISHING; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Maeda, M, and Takasaki, K. Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma cvd technique which is employed in a selective oxidation process. United States: N. p., 1982. Web.
Maeda, M, & Takasaki, K. Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma cvd technique which is employed in a selective oxidation process. United States.
Maeda, M, and Takasaki, K. Tue . "Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma cvd technique which is employed in a selective oxidation process". United States.
@article{osti_6381843,
title = {Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma cvd technique which is employed in a selective oxidation process},
author = {Maeda, M and Takasaki, K},
abstractNote = {A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {12}
}