Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into Si

Journal Article · Thu Nov 15 00:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95022· OSTI ID:6367328

Holland, O W; Sjoreen, T P; Fathy, D; Narayan, J

The dependence of the implantation-induced morphology on substrate heating during high dose O/sup +/ irradiation of Si was investigated. For high dose oxygen implantation, a continuous buried oxide layer forms during implantation. It is shown that the damage morphology in the crystalline region ahead of the buried oxide is extremely sensitive to variations in the temperature of the substrate about 475 /sup 0/C. Both backscattering/channeling spectroscopy and transmission electron microscopy were used in determining the microstructure of the implanted samples.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6367328
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 45:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BACKSCATTERING
DAMAGE
HEATING
HIGH TEMPERATURE
ION CHANNELING
MORPHOLOGY
OXYGEN
PHYSICAL RADIATION EFFECTS
SURFACES
TEMPERATURE EFFECTS
TR
CHANNELING
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
MICROSCOPY
NONMETALS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
360602* - Other Materials- Structure & Phase Studies
360605 - Materials- Radiation Effects