Setup for [ital in situ] x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films

Journal Article · Wed Sep 01 00:00:00 EDT 1999 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.1149973· OSTI ID:6366981

Grigull, S; Foltyn, S; Hollander, M G; Evans, C R; Nastasi, M ^[1]

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1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100[endash]720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar[sup 2+] ions into a zirconia thin film illustrate the potential of the instrument. [copyright] [ital 1999 American Institute of Physics.]

• OSTI ID: 6366981
• Journal Information: Review of Scientific Instruments, Vol. 70:9; ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ARGON IONS
BACKSCATTERING
DAMAGE
DEPTH
DESIGN
GONIOMETERS
HELIUM IONS
ION CHANNELING
ION IMPLANTATION
KEV RANGE 100-1000
PHYSICAL RADIATION EFFECTS
RUTHERFORD SCATTERING
STAINS
THIN FILMS
USES
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS
CHANNELING
CHARGED PARTICLES
COHERENT SCATTERING
DIFFRACTION
DIMENSIONS
ELASTIC SCATTERING
ENERGY RANGE
FILMS
IONS
KEV RANGE
MEASURING INSTRUMENTS
RADIATION EFFECTS
SCATTERING
TRANSITION ELEMENT COMPOUNDS
440800* - Miscellaneous Instrumentation- (1990-)
665300 - Interactions Between Beams & Condensed Matter- (1992-)
360602 - Other Materials- Structure & Phase Studies