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Title: Setup for [ital in situ] x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films

Abstract

A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100[endash]720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar[sup 2+] ions into a zirconia thin film illustrate the potential of the instrument. [copyright] [ital 1999 American Institute of Physics.]

Authors:
; ; ; ;  [1]
  1. (Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States))
Publication Date:
OSTI Identifier:
6366981
Alternate Identifier(s):
OSTI ID: 6366981
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 70:9; Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ARGON IONS; BACKSCATTERING; DAMAGE; DEPTH; DESIGN; GONIOMETERS; HELIUM IONS; ION CHANNELING; ION IMPLANTATION; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; STAINS; THIN FILMS; USES; X-RAY DIFFRACTION; ZIRCONIUM COMPOUNDS; CHANNELING; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELASTIC SCATTERING; ENERGY RANGE; FILMS; IONS; KEV RANGE; MEASURING INSTRUMENTS; RADIATION EFFECTS; SCATTERING; TRANSITION ELEMENT COMPOUNDS 440800* -- Miscellaneous Instrumentation-- (1990-); 665300 -- Interactions Between Beams & Condensed Matter-- (1992-); 360602 -- Other Materials-- Structure & Phase Studies

Citation Formats

Grigull, S., Foltyn, S., Hollander, M.G., Evans, C.R., and Nastasi, M. Setup for [ital in situ] x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films. United States: N. p., 1999. Web. doi:10.1063/1.1149973.
Grigull, S., Foltyn, S., Hollander, M.G., Evans, C.R., & Nastasi, M. Setup for [ital in situ] x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films. United States. doi:10.1063/1.1149973.
Grigull, S., Foltyn, S., Hollander, M.G., Evans, C.R., and Nastasi, M. Wed . "Setup for [ital in situ] x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films". United States. doi:10.1063/1.1149973.
@article{osti_6366981,
title = {Setup for [ital in situ] x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films},
author = {Grigull, S. and Foltyn, S. and Hollander, M.G. and Evans, C.R. and Nastasi, M.},
abstractNote = {A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100[endash]720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar[sup 2+] ions into a zirconia thin film illustrate the potential of the instrument. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.1149973},
journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = ,
volume = 70:9,
place = {United States},
year = {1999},
month = {9}
}