InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073452· OSTI ID:6361911

Wakao, K; Nakai, K; Sanada, T; Kuno, M; Odagawa, T; Yamakoshi, S

InGaAsP/InP planar buried heterostructure (BH) lasers with semi-insulating current blocking layers have been realized using LPE and MOCVD hybrid growth. The planar structure has been obtained by developing the selective embedding growth in MOCVD. Low threshold current of 17 mA and high efficiency of 42 percent have been attained with the BH lasers. Small-signal modulation bandwidth of 10 GHz has also been achieved.

• Research Organization: Fujitsu Labs., Ltd., Atsugi, Kanagawa
• OSTI ID: 6361911
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
LIQUID PHASE EPITAXY
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
CRYSTAL GROWTH
ELECTRICAL INSULATION
FREQUENCY MODULATION
GHZ RANGE 01-100
LAYERS
QUANTUM EFFICIENCY
SIGNALS
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
FREQUENCY RANGE
GALLIUM COMPOUNDS
GHZ RANGE
INDIUM COMPOUNDS
LASERS
MODULATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies