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Title: Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers

Abstract

We have fabricated 15.4[percent] and 12.4[percent] efficient thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2]. The ED and EL device parameters are compared with those of a 17.7[percent] PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. [copyright] [ital 1999 American Institute of Physics.]

Authors:
;  [1]; ;  [2]
  1. (National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States))
  2. (Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States))
Publication Date:
OSTI Identifier:
6350148
Alternate Identifier(s):
OSTI ID: 6350148
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75:10; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; COPPER COMPOUNDS; COPPER SELENIDE SOLAR CELLS; ELECTRODEPOSITION; GALLIUM COMPOUNDS; GALLIUM SELENIDES; INDIUM COMPOUNDS; INDIUM SELENIDE SOLAR CELLS; PHOTOVOLTAIC CELLS; PHYSICAL VAPOR DEPOSITION; PRECURSOR; SPECTRAL RESPONSE; THIN FILMS; CHALCOGENIDES; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTROLYSIS; EQUIPMENT; FILMS; LYSIS; PHOTOELECTRIC CELLS; SELENIDES; SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS 140501* -- Solar Energy Conversion-- Photovoltaic Conversion

Citation Formats

Bhattacharya, R.N., Batchelor, W., Hiltner, J.F., and Sites, J.R. Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers. United States: N. p., 1999. Web. doi:10.1063/1.124716.
Bhattacharya, R.N., Batchelor, W., Hiltner, J.F., & Sites, J.R. Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers. United States. doi:10.1063/1.124716.
Bhattacharya, R.N., Batchelor, W., Hiltner, J.F., and Sites, J.R. Wed . "Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers". United States. doi:10.1063/1.124716.
@article{osti_6350148,
title = {Thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] photovoltaic cells from solution-based precursor layers},
author = {Bhattacharya, R.N. and Batchelor, W. and Hiltner, J.F. and Sites, J.R.},
abstractNote = {We have fabricated 15.4[percent] and 12.4[percent] efficient thin-film CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2] (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn[sub 1[minus]x]Ga[sub x]Se[sub 2]. The ED and EL device parameters are compared with those of a 17.7[percent] PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.124716},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = ,
volume = 75:10,
place = {United States},
year = {1999},
month = {9}
}