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Title: Properties of high gain GaAs switches for pulsed power applications

Abstract

High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electrical and optical short pulse applications. The highest power application, which the authors are developing, is a compact, repetitive, short pulse linear induction accelerator. The array of PCSS, which drive the accelerator, will switch 75 kA and 250 kV in 30 ns long pulses at 50 Hz. The accelerator will produce a 700 kV, 7kA electron beam for industrial and military applications. In the low power regime, these switches are being used to switch 400 A and 5 kV to drive laser diode arrays which produce 100 ps optical pulses. These short optical pulses are for military and commercial applications in optical and electrical range sensing, 3D laser radar, and high speed imaging. Both types of these applications demand a better understanding of the switch properties to increase switch lifetime, reduce jitter, optimize optical triggering, and improve overall switch performance. These applications and experiments on the fundamental behavior of high gain GaAs switches will be discussed. Open shutter, infra-red images and time-resolved images of the current filaments, which form during high gain switching, will be presented. Results from optical triggering experiments to produce multiple, diffuse filamentsmore » for high current repetitive switching will be described.« less

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. OptoMetrix, Inc., Renton, WA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
634121
Report Number(s):
SAND-96-3015C; CONF-9706113-
ON: DE98000185; TRN: 98:009487
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 11. IEEE international pulsed power conference, Baltimore, MD (United States), 29 Jun - 2 Jul 1997; Other Information: PBD: Sep 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 43 PARTICLE ACCELERATORS; SEMICONDUCTOR SWITCHES; GALLIUM ARSENIDES; LINEAR ACCELERATORS; SEMICONDUCTOR LASERS; USES; POWER SUPPLIES; PERFORMANCE

Citation Formats

Zutavern, F J, Loubriel, G M, Hjalmarson, H P, Mar, A, Helgeson, W D, O`Malley, M W, Ruebush, M H, and Falk, R A. Properties of high gain GaAs switches for pulsed power applications. United States: N. p., 1997. Web.
Zutavern, F J, Loubriel, G M, Hjalmarson, H P, Mar, A, Helgeson, W D, O`Malley, M W, Ruebush, M H, & Falk, R A. Properties of high gain GaAs switches for pulsed power applications. United States.
Zutavern, F J, Loubriel, G M, Hjalmarson, H P, Mar, A, Helgeson, W D, O`Malley, M W, Ruebush, M H, and Falk, R A. 1997. "Properties of high gain GaAs switches for pulsed power applications". United States. https://www.osti.gov/servlets/purl/634121.
@article{osti_634121,
title = {Properties of high gain GaAs switches for pulsed power applications},
author = {Zutavern, F J and Loubriel, G M and Hjalmarson, H P and Mar, A and Helgeson, W D and O`Malley, M W and Ruebush, M H and Falk, R A},
abstractNote = {High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electrical and optical short pulse applications. The highest power application, which the authors are developing, is a compact, repetitive, short pulse linear induction accelerator. The array of PCSS, which drive the accelerator, will switch 75 kA and 250 kV in 30 ns long pulses at 50 Hz. The accelerator will produce a 700 kV, 7kA electron beam for industrial and military applications. In the low power regime, these switches are being used to switch 400 A and 5 kV to drive laser diode arrays which produce 100 ps optical pulses. These short optical pulses are for military and commercial applications in optical and electrical range sensing, 3D laser radar, and high speed imaging. Both types of these applications demand a better understanding of the switch properties to increase switch lifetime, reduce jitter, optimize optical triggering, and improve overall switch performance. These applications and experiments on the fundamental behavior of high gain GaAs switches will be discussed. Open shutter, infra-red images and time-resolved images of the current filaments, which form during high gain switching, will be presented. Results from optical triggering experiments to produce multiple, diffuse filaments for high current repetitive switching will be described.},
doi = {},
url = {https://www.osti.gov/biblio/634121}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 1997},
month = {Mon Sep 01 00:00:00 EDT 1997}
}

Conference:
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