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Title: Dielectrics for GaN based MIS-diodes

Abstract

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Authors:
; ;  [1]
+ Show Author Affiliations
  1. Univ. of Florida, Gainesville, FL (United States) [and others
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Financial Management and Controller, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States); Electric Power Research Inst., Palo Alto, CA (United States)
OSTI Identifier:
634115
Report Number(s):
SAND-98-0524C; CONF-971201-
ON: DE98004137; BR: YN0100000; CNN: Grant ECS-9522887; TRN: AHC2DT01%%126
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: Feb 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DIODES; GALLIUM NITRIDES; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; ELECTRICAL PROPERTIES; GALLIUM OXIDES; GADOLINIUM OXIDES; EXPERIMENTAL DATA

Citation Formats

Ren, F., Abernathy, C.R., and MacKenzie, J.D.. Dielectrics for GaN based MIS-diodes. United States: N. p., 1998. Web. doi:10.2172/634115.
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Ren, F., Abernathy, C.R., & MacKenzie, J.D.. Dielectrics for GaN based MIS-diodes. United States. doi:10.2172/634115.
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Ren, F., Abernathy, C.R., and MacKenzie, J.D.. Sun . "Dielectrics for GaN based MIS-diodes". United States. doi:10.2172/634115. https://www.osti.gov/servlets/purl/634115.
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@article{osti_634115,
title = {Dielectrics for GaN based MIS-diodes},
author = {Ren, F. and Abernathy, C.R. and MacKenzie, J.D.},
abstractNote = {GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.},
doi = {10.2172/634115},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 1998},
month = {Sun Feb 01 00:00:00 EST 1998}
}
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Technical Report:
View Technical Report (0.30 MB)
DOI:  10.2172/634115
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