Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of California, Davis, CA (United States)
In this paper the authors report on the direct bonding of compound semiconductors and silicon annealed at low temperatures (400 C) using hydrogen and nitrogen. Pressure and temperature relationships on interface characteristics were investigated with high resolution transmission electron microscopy and energy dispersive x-ray spectroscopy. It was found that no morphology differences existed between hydrogen and nitrogen annealed samples. applying the N{sub 2} bonding process, 850nm bottom emitting vertical cavity surface emitting lasers (VCSELs), were bonded to a transparent AlGaAs substrate. Finally, high anneal temperatures (up to 450 C) and shear stress values (> 1.6 MPa) were obtained for GaAs bonded to Si using a dry (plasma) activation technique.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 634098
- Report Number(s):
- SAND-97-2634C; CONF-970805-; ON: DE98004025; BR: YN0100000; TRN: AHC2DT01%%109
- Resource Relation:
- Conference: 192. meeting of the Electrochemical Society and 48. annual meeting of the International Society of Electrochemistry, Paris (France), 31 Aug - 5 Sep 1997; Other Information: PBD: Oct 1997
- Country of Publication:
- United States
- Language:
- English
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