AlAs/GaAs superlattice barrier unipolar diode structure

Conference · Sun Jan 01 00:00:00 EST 1984

OSTI ID:6336579

Drummond, T J; Hjalmarson, H P; Pearah, P; Morkoc, H

GaAs capacitor structures employing a thin undoped layer of (Al, Ga)As as a dielectric have been described and successfully used as gates in field effect transistors with transconductors exceeding 200 mS/mm at 77K. To improve the interface and bulk properties of the barrier, an AlAs/GaAs superlattice was substituted for the (Al, Ga)As. The I-V characteristics measured for the superlattice barrier structures had greatly reduced currents and a much larger degree of rectification than could be explained by conventional thermionic emission theory. A new theoretical model describing phonon-assisted emission provides a very good qualitative fit to the measured data. With the aid of this model we also find dramatic evidence for believing the conduction band offset in the AlAs/GaAs system is approximately 60% of the difference in the direct bandgaps.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Illinois Univ., Urbana (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6336579
• Report Number(s): SAND-84-1597C; CONF-841234-1; ON: DE85001904
• Resource Relation: Conference: International electron devices meeting, San Francisco, CA, USA, 10 Dec 1984; Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR DIODES
SUPERLATTICES
ALUMINIUM ARSENIDES
CAPACITORS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)