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Title: Measuring hot electron temperatures in semiconductors under high injection levels

Abstract

One of the most widely used methods to measure the excess carrier temperature in semiconductors is super band gap time-resolved photoluminescence. We find that under high carrier injection levels the formalism commonly used to extract the electron temperature using this method is erroneous due to the neglect of the role of the quasi-Fermi levels. A method that can be used to obtain accurate carrier temperatures while taking into account the important factors affecting the excess carrier concentration is proposed. The method is used to analyze time-resolved photoluminescence measurements performed on thin GaAs epilayers. It is found that the proposed method accurately corrects the apparent slow electron cooling frequently found in bulk semiconductors. [copyright] [ital 1999 American Institute of Physics.]

Authors:
;  [1];  [2];  [3]
  1. (Raymond and Beverly Sackler Faculty of Exact Sciences, School of Chemistry, Tel Aviv University, Ramat Aviv 69978 (Israel))
  2. (National Renewable Energy Laboratory, Golden, Colorado 80401 (United States))
  3. (Department of Physical Electronics, Faculty of Engineering, Tel Aviv University, Ramat Aviv 69978 (Israel))
Publication Date:
OSTI Identifier:
6330903
Alternate Identifier(s):
OSTI ID: 6330903
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 86:6; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; ELECTRON TEMPERATURE; ENERGY GAP; EPITAXY; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; RECOMBINATION; THIN FILMS; ARSENIC COMPOUNDS; ARSENIDES; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; PNICTIDES 360606* -- Other Materials-- Physical Properties-- (1992-)

Citation Formats

Poles, E., Huppert, D., Hanna, M.C., and Rosenwaks, Y. Measuring hot electron temperatures in semiconductors under high injection levels. United States: N. p., 1999. Web. doi:10.1063/1.371235.
Poles, E., Huppert, D., Hanna, M.C., & Rosenwaks, Y. Measuring hot electron temperatures in semiconductors under high injection levels. United States. doi:10.1063/1.371235.
Poles, E., Huppert, D., Hanna, M.C., and Rosenwaks, Y. Wed . "Measuring hot electron temperatures in semiconductors under high injection levels". United States. doi:10.1063/1.371235.
@article{osti_6330903,
title = {Measuring hot electron temperatures in semiconductors under high injection levels},
author = {Poles, E. and Huppert, D. and Hanna, M.C. and Rosenwaks, Y.},
abstractNote = {One of the most widely used methods to measure the excess carrier temperature in semiconductors is super band gap time-resolved photoluminescence. We find that under high carrier injection levels the formalism commonly used to extract the electron temperature using this method is erroneous due to the neglect of the role of the quasi-Fermi levels. A method that can be used to obtain accurate carrier temperatures while taking into account the important factors affecting the excess carrier concentration is proposed. The method is used to analyze time-resolved photoluminescence measurements performed on thin GaAs epilayers. It is found that the proposed method accurately corrects the apparent slow electron cooling frequently found in bulk semiconductors. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.371235},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = ,
volume = 86:6,
place = {United States},
year = {1999},
month = {9}
}