Minority carrier induced debonding of hydrogen from shallow donors in silicon
We have investigated the dissociation of donor-hydrogen pairs in Schottky barrier capacitors fabricated from phosphorus and arsenic doped silicon, at temperatures in the range 24 to 110{degree}C. In equilibrium the release of donor trapped hydrogen does not follow first order kinetics. Introduction of minority carriers by illumination or forward bias injection enhances the rate of hydrogen release and redistribution, but otherwise leaves the functional form relatively unchanged. Numerical modeling shows that the debonding rate must be proportional to the local hole density. If the dissociation process is carried out in reverse diode bias, most of the released hydrogen rebonds deeper in the silicon, outside the depletion region. In addition, a portion of the charge density in the depleted region is seen to be metastable and disappears after several hours at room temperature. This observation suggests the existence of a positive charge state of the donor-hydrogen pair which may be the precursor to dissociation. While several groups have recently pointed out that reverse-bias annealing data suggest the existence of a negative charge state of interstitial hydrogen, our observation of an electronically controlled debonding rate casts considerable doubt on the firmness of that conclusion. 15 refs., 4 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6330495
- Report Number(s):
- SAND-90-1715C; CONF-901105-21; ON: DE91004032
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 24 Nov - 1 Dec 1990
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
HYDROGEN
DISSOCIATION
SCHOTTKY BARRIER DIODES
BONDING
CAPACITORS
DOPED MATERIALS
SILICON
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
FABRICATION
JOINING
MATERIALS
NONMETALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
656002* - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)
360603 - Materials- Properties
400201 - Chemical & Physicochemical Properties