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Title: High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers

Abstract

We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 {mu}m. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H{sup +} implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10-{mu}m-diam emitting windows, {similar to}4 mA thresholds with continuous-wave (cw) room-temperature output powers {gt}1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical-cavity surface-emitting lasers.

Authors:
; ; ;  [1]; ; ; ; ;  [2]
  1. AT T Bell Laboratories, Holmdel, NJ (USA)
  2. AT T Bell Laboratories, STC, Breinigsville, PA (USA)
Publication Date:
OSTI Identifier:
6329927
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 57:18; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LASER CAVITIES; DESIGN; PERFORMANCE; SEMICONDUCTOR LASERS; EXPERIMENTAL DATA; FABRICATION; OPERATION; POWER; THRESHOLD CURRENT; USES; CURRENTS; DATA; ELECTRIC CURRENTS; INFORMATION; LASERS; NUMERICAL DATA; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Tell, B, Lee, Y H, Brown-Goebeler, K F, Jewell, J L, Leibenguth, R E, Asom, M T, Livescu, G, Luther, L, and Mattera, V D. High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers. United States: N. p., 1990. Web. doi:10.1063/1.104038.
Tell, B, Lee, Y H, Brown-Goebeler, K F, Jewell, J L, Leibenguth, R E, Asom, M T, Livescu, G, Luther, L, & Mattera, V D. High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers. United States. doi:10.1063/1.104038.
Tell, B, Lee, Y H, Brown-Goebeler, K F, Jewell, J L, Leibenguth, R E, Asom, M T, Livescu, G, Luther, L, and Mattera, V D. Mon . "High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers". United States. doi:10.1063/1.104038.
@article{osti_6329927,
title = {High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers},
author = {Tell, B and Lee, Y H and Brown-Goebeler, K F and Jewell, J L and Leibenguth, R E and Asom, M T and Livescu, G and Luther, L and Mattera, V D},
abstractNote = {We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 {mu}m. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H{sup +} implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10-{mu}m-diam emitting windows, {similar to}4 mA thresholds with continuous-wave (cw) room-temperature output powers {gt}1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical-cavity surface-emitting lasers.},
doi = {10.1063/1.104038},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 57:18,
place = {United States},
year = {1990},
month = {10}
}