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Title: Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector

Abstract

We propose a method for forming a top distributed Bragg reflector (DBR) during very-low temperature (VLT) molecular-beam epitaxy (MBE) growth that is independent of the substrate being used. By varying the arsenic overpressure during VLT MBE, it was determined by Auger electron spectroscopy and cross-section transmission electron microscopy that alternating layers of polycrystalline GaAs and amorphous (Al,As) can be deposited. Because these layers are not single crystal, they can be grown on any host lattice. After lateral wet oxidation, the polycrystalline GaAs does not undergo any significant changes; whereas the amorphous (Al,As) becomes an amorphous aluminum oxide. An index step of [Delta]n=1.88 is realized between these two layers which makes it possible to fabricate a high efficiency DBR with very few polycrystal-GaAs/amorphous-Al-oxide pairs on GaAs-, GaP-, or InP-based materials. Using reflectivity measurements, we demonstrate a five pair GaAs/AlAs-based DBR grown on an InP substrate that reflects wavelengths between 1.4 and 2.3 [mu]m up to 95[percent]. [copyright] [ital 1999 American Institute of Physics.]

Authors:
; ; ; ; ; ;  [1]
  1. (Department of Electrical and Computer Engineering, and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States))
Publication Date:
OSTI Identifier:
6325701
Alternate Identifier(s):
OSTI ID: 6325701
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75:10; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; AUGER ELECTRON SPECTROSCOPY; BRAGG REFLECTION; CHEMICAL COMPOSITION; GALLIUM ARSENIDES; LASER MIRRORS; MOLECULAR BEAM EPITAXY; OXIDATION; REFLECTIVITY; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EPITAXY; GALLIUM COMPOUNDS; LASERS; MICROSCOPY; MIRRORS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFLECTION; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTROSCOPY; SURFACE PROPERTIES 426002* -- Engineering-- Lasers & Masers-- (1990-)

Citation Formats

Wohlert, D.E., Lin, H.C., Chang, K.L., Pickrell, G.W. Jr., Epple, J.H., Hsieh, K.C., and Cheng, K.Y. Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector. United States: N. p., 1999. Web. doi:10.1063/1.124697.
Wohlert, D.E., Lin, H.C., Chang, K.L., Pickrell, G.W. Jr., Epple, J.H., Hsieh, K.C., & Cheng, K.Y. Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector. United States. doi:10.1063/1.124697.
Wohlert, D.E., Lin, H.C., Chang, K.L., Pickrell, G.W. Jr., Epple, J.H., Hsieh, K.C., and Cheng, K.Y. Wed . "Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector". United States. doi:10.1063/1.124697.
@article{osti_6325701,
title = {Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector},
author = {Wohlert, D.E. and Lin, H.C. and Chang, K.L. and Pickrell, G.W. Jr. and Epple, J.H. and Hsieh, K.C. and Cheng, K.Y.},
abstractNote = {We propose a method for forming a top distributed Bragg reflector (DBR) during very-low temperature (VLT) molecular-beam epitaxy (MBE) growth that is independent of the substrate being used. By varying the arsenic overpressure during VLT MBE, it was determined by Auger electron spectroscopy and cross-section transmission electron microscopy that alternating layers of polycrystalline GaAs and amorphous (Al,As) can be deposited. Because these layers are not single crystal, they can be grown on any host lattice. After lateral wet oxidation, the polycrystalline GaAs does not undergo any significant changes; whereas the amorphous (Al,As) becomes an amorphous aluminum oxide. An index step of [Delta]n=1.88 is realized between these two layers which makes it possible to fabricate a high efficiency DBR with very few polycrystal-GaAs/amorphous-Al-oxide pairs on GaAs-, GaP-, or InP-based materials. Using reflectivity measurements, we demonstrate a five pair GaAs/AlAs-based DBR grown on an InP substrate that reflects wavelengths between 1.4 and 2.3 [mu]m up to 95[percent]. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.124697},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = ,
volume = 75:10,
place = {United States},
year = {1999},
month = {9}
}