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Title: Electromechanical properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films

Abstract

Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 {mu}C/cm{sup 2} and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5{center_dot}10{sup {minus}4} was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 10{sup 9} switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m{sup 4}/C{sup 2}. The electromechanical behavior of SBT films suggested no or weak contribution of non-180{degree} domain walls to the strain response. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ;  [1]
  1. Laboratoire de Ceramique, Departement des Materiaux, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
632521
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 71; Journal Issue: 14; Other Information: PBD: Oct 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; STRONTIUM OXIDES; ELECTROMECHANICS; BISMUTH OXIDES; TANTALATES; STRONTIUM COMPOUNDS; BISMUTH COMPOUNDS; PERMITTIVITY; THIN FILMS; PIEZOELECTRICITY; FERROELECTRIC MATERIALS; POLARIZATION; DIELECTRIC PROPERTIES; CERAMICS; STRAINS

Citation Formats

Kholkin, A L, Brooks, K G, and Setter, N. Electromechanical properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films. United States: N. p., 1997. Web. doi:10.1063/1.119782.
Kholkin, A L, Brooks, K G, & Setter, N. Electromechanical properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films. United States. https://doi.org/10.1063/1.119782
Kholkin, A L, Brooks, K G, and Setter, N. 1997. "Electromechanical properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films". United States. https://doi.org/10.1063/1.119782.
@article{osti_632521,
title = {Electromechanical properties of SrBi{sub 2}Ta{sub 2}O{sub 9} thin films},
author = {Kholkin, A L and Brooks, K G and Setter, N},
abstractNote = {Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 {mu}C/cm{sup 2} and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported previously on poled SBT ceramics. Electrically induced strain of 5{center_dot}10{sup {minus}4} was observed using bipolar driving field of 300 kV/cm. No piezoelectric fatigue was found until 10{sup 9} switching pulses, in agreement with polarization data. The piezoelectric properties and strains were successfully described by using a simple electrostriction equation with the effective electrostriction coefficient of 0.1 m{sup 4}/C{sup 2}. The electromechanical behavior of SBT films suggested no or weak contribution of non-180{degree} domain walls to the strain response. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.119782},
url = {https://www.osti.gov/biblio/632521}, journal = {Applied Physics Letters},
number = 14,
volume = 71,
place = {United States},
year = {1997},
month = {10}
}