Light-induced metastable defects in amorphous silicon: The role of hydrogen
Journal Article
·
· Appl. Phys. Lett.; (United States)
The role of hydrogen in the creation and annealing kinetics of the light-induced metastable defects in hydrogenated amorphous silicon is investigated using electron spin resonance. Deuterated and hydrogenated films exhibited the same defect creation rate and nearly identical distributions of annealing energies. Implications of these results for various microscopic models for the creation of metastable defects are discussed.
- Research Organization:
- Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
- OSTI ID:
- 6322243
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 48:1
- Country of Publication:
- United States
- Language:
- English
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+1 more
Related Subjects
36 MATERIALS SCIENCE
SILICON
ANNEALING
CRYSTAL DEFECTS
METASTABLE STATES
AMORPHOUS STATE
CHEMICAL BONDS
DEUTERIUM
ELECTRON SPIN RESONANCE
HYDROGENATION
INFRARED SPECTRA
PHOTON COLLISIONS
X-RAY SPECTROSCOPY
CHEMICAL REACTIONS
COLLISIONS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY LEVELS
EXCITED STATES
HEAT TREATMENTS
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
MAGNETIC RESONANCE
NUCLEI
ODD-ODD NUCLEI
RESONANCE
SEMIMETALS
SPECTRA
SPECTROSCOPY
STABLE ISOTOPES
360603* - Materials- Properties
SILICON
ANNEALING
CRYSTAL DEFECTS
METASTABLE STATES
AMORPHOUS STATE
CHEMICAL BONDS
DEUTERIUM
ELECTRON SPIN RESONANCE
HYDROGENATION
INFRARED SPECTRA
PHOTON COLLISIONS
X-RAY SPECTROSCOPY
CHEMICAL REACTIONS
COLLISIONS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY LEVELS
EXCITED STATES
HEAT TREATMENTS
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
MAGNETIC RESONANCE
NUCLEI
ODD-ODD NUCLEI
RESONANCE
SEMIMETALS
SPECTRA
SPECTROSCOPY
STABLE ISOTOPES
360603* - Materials- Properties