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Title: High quality photovoltaic semiconductor material and laser ablation method of fabrication same

Patent ·
OSTI ID:6319366

A method is described of forming hydrogenated amorphous germanium alloy material, said material characterized by (a) the substantial absence of germanium hydrides, other than the monohydride, (b) a mobility-lifetime product for nonequilibrium charge carriers therein of about 10 [sup [minus]8] cm[sup 2]/V, and (c) a density of defect states in the band gap of the host matrix thereof of less than about 1 x 10[sup 17]/cm[sup 3]; said method comprising the steps of: providing a deposition chamber; providing a substrate in said deposition chamber; positioning at least one target of germanium containing material adjacent said substrate; providing a laser; evacuating said deposition chamber to a sub-atmospheric pressure; introducing into said evacuated deposition chamber a background gas including a partial pressure of at least hydrogen; and depositing, by laser ablation, germanium from said target and hydrogen from said partial pressure onto said substrate; thereby forming on said substrate a layer of hydrogenated germanium alloy material having an amorphous microstructure, said material characterized by the substantial absence of incorporated germanium hydrides, other than the monohydride, a mobility-lifetime product for nonequilibrium charge carriers therein of about 10[sup [minus]8] cm[sup 2]/V, and a density of defect states in the band gap of the host matrix thereof of less than about 1 x 10[sup 17]/cm[sup 3].

Assignee:
Energy Conversion Devices, Inc., Troy, MI (United States)
Patent Number(s):
US 5231047; A
Application Number:
PPN: US 7-811159
OSTI ID:
6319366
Resource Relation:
Patent File Date: 19 Dec 1991
Country of Publication:
United States
Language:
English