Method and device for providing an ohmic contact of high resistance on a semiconductor at low temperatures

Patent · Tue Jun 05 00:00:00 EDT 1984

OSTI ID:6317006

Jensen, M; Levine, J D

A method and device are disclosed which allows an ohmic electrical contact with P-type semiconductor material using metallic foil at low temperature without significant diffusion of the metal into the semiconductor. The contact exhibits opposition to physical separation and has a predetermined electrical resistance.

• Assignee: Texas Instruments Incorporated
• Patent Number(s): US 4451968
• OSTI ID: 6317006
• Resource Relation: Patent File Date: Filed date 8 Sep 1981; Other Information: PAT-APPL-299694
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ELECTRIC CONTACTS
DESIGN
FABRICATION
DIFFUSION
ELECTRIC CONDUCTIVITY
FOILS
METALS
P-TYPE CONDUCTORS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
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360601 - Other Materials- Preparation & Manufacture