Modeling of plasma etch processes using well stirred reactor approximations and including complex gas-phase surface reactions
- Sandia National Labs., Livermore, CA (United States)
- Sandia National Labs., Albuquerque, NM (United States)
Steady state species compositions in etching reactors are determined by solving species, mass, and electron-energy balance equations. The electron-energy equation includes a detailed power balance with losses to ions and electrons through the sheath, as well as inelastic and elastic collision losses. The reactors are assumed to be perfectly stirred in order to reduce the computational expense and emphasize the dependence of chemistry on etch-process parameters. Well-stirred reactors are characterized by a reactor geometry, net fluid flow or residence time, pressure, energy loss, power deposition, surface area, and inlet-gas composition. Results show dependence of species composition in the etch chamber (including ion, electron, and neutral radical concentrations) on the parameters characterizing the reactor. Studies of chlorine and oxygen plasmas indicate increased electronegativity with pressure and inlet flow rate. Both oxygen and chlorine molecules dissociate rapidly, although the dependence of this result on assumed atomic wall-sticking coefficients is significant. Comparison of results to experimental data support trends predicted by the well-stirred reactor model. The plasma-kinetic rate coefficients are obtained from both Maxwellian and Boltzmann electron energy distribution functions, with a comparison of these two approaches.
- OSTI ID:
- 63064
- Report Number(s):
- CONF-940604-; ISBN 0-7803-2006-9; TRN: IM9527%%115
- Resource Relation:
- Conference: 1994 Institute of Electrical and Electronic Engineers (IEEE) international conference on plasma science, Santa Fe, NM (United States), 6-8 Jun 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE international conference on plasma science; PB: 252 p.
- Country of Publication:
- United States
- Language:
- English
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