Impact ionization resonance and Auger recombination in Hg/sub 1-x/Cd/sub x/Te (0. 6 less than or equal to x less than or equal to 0. 7)

Journal Article · Wed Jul 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073494· OSTI ID:6298454

Lecoy, G P; Orsal, B; Alabedra, R

The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg/sub 1-x/Cd/sub x/Te avalanche photodiodes, with 0.6 less than or equal to x less than or equal to 0.7. For x -- 0.7 it is shown that the spin orbit splitting is lower than the bandgap energy E/sub g/ so that impact ionization is initiated by holes from the split-off valence band. For x -- 0.6, -- E/sub g/, the rate of the Auger recombination is maximum, corresponding to a resonant impact ionization and to a maximum ratio k = US / where and US are, respectively, the impact ionization coefficient for electrons and holes.

• Research Organization: Centre Electronique de Montpellier, associe au CNRS UA 391, Universite des Sciences et Techniques du Languedoc, 34060 Montpellier Cedex
• OSTI ID: 6298454
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CADMIUM ALLOYS
AUGER EFFECT
IONIZATION
OPTICAL PROPERTIES
MERCURY ALLOYS
PHOTODIODES
TELLURIUM ALLOYS
ELECTRONS
GRADED BAND GAPS
HOLES
L-S COUPLING
RECOMBINATION
RESONANCE
ALLOYS
COUPLING
ELEMENTARY PARTICLES
FERMIONS
INTERMEDIATE COUPLING
LEPTONS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
360104* - Metals & Alloys- Physical Properties
360106 - Metals & Alloys- Radiation Effects
400500 - Photochemistry