Interface chemistry of metal-GaAs Schottky-barrier contacts

Journal Article · Tue May 15 00:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90642· OSTI ID:6296922

Waldrop, J R; Grant, R W

A survey of the metal-semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x-ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.

• Research Organization: Rockwell International Science Center, Thousand Oaks, California 91360
• OSTI ID: 6296922
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 34:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
GALLIUM ARSENIDES
ELECTRIC CONTACTS
CRYSTAL GROWTH
ELECTRONIC EQUIPMENT
EPITAXY
FIELD EFFECT TRANSISTORS
INTERFACES
METALS
OXIDES
SCHOTTKY BARRIER DIODES
SOLAR CELLS
X-RAY SPECTROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
TRANSISTORS
360302* - Composite Materials- Structure & Phase Studies- (-1987)
140501 - Solar Energy Conversion- Photovoltaic Conversion