Continuously graded-index separate confinement heterostructure multiquantum well Ga sub 1 minus x In sub x As sub 1 minus y P sub y /InP ridge waveguide lasers grown by low-pressure metalorganic chemical vapor deposition with lattice-matched quaternary wells and barriers

Journal Article · Mon Oct 08 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103374· OSTI ID:6289147

Ludowise, M J; Ranganath, T R; Fischer-Colbrie, A ^[1]

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1. Hewlett-Packard Laboratories, Palo Alto, CA (USA)

Continuously graded-index separate confinement heterostructure multiple quantum well (four wells, {ital L}{sub {ital z}} {approximately}50 A) lasers fabricated in the Ga{sub 1{minus}{ital x}}In{sub {ital x}}As{sub 1{minus}{ital y}}P{sub {ital y}}/InP system with lattice-matched quaternary wells (bulk emission wavelength {lambda}{sub {ital g}}=1.39 {mu}m) and barriers ({lambda}{sub {ital g}}=1.2 {mu}m) are reported. A 5-{mu}m-wide ridge waveguide laser operates with laser threshold current {ital I}{sub th}=34 mA at room temperature ({lambda}{approximately}1286 nm) with an external differential quantum efficiency of {approximately}19% per facet and a temperature coefficient {ital T}{sub 0} {approximately}40 K. Large-area threshold current density is measured at 1.1 kA/cm{sup 2} on a 40{times}300 {mu}m{sup 2} device.

• OSTI ID: 6289147
• Journal Information: Applied Physics Letters; (USA), Vol. 57:15; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
CHEMICAL VAPOR DEPOSITION
DESIGN
HETEROJUNCTIONS
ORGANOMETALLIC COMPOUNDS
QUANTUM EFFICIENCY
REFRACTIVITY
THRESHOLD CURRENT
CHEMICAL COATING
CURRENTS
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
JUNCTIONS
LASERS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)