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Title: Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates

Abstract

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al{sub 0.1}Ga{sub 0.9}As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm{sup 2} were measured with an emission efficiency of 0.2 mW/mA.

Authors:
; ; ; ; ;  [1]
  1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)
Publication Date:
OSTI Identifier:
6289143
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 57:16; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; THRESHOLD CURRENT; ALUMINIUM ARSENIDES; FABRICATION; GALLIUM ARSENIDES; LASER CAVITIES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; EFFICIENCY; ELECTRIC CURRENTS; EPITAXY; GALLIUM COMPOUNDS; LASERS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Wang, Y H, Tai, K, Hsieh, Y F, Chu, S N.G., Wynn, J D, and Cho, A Y. Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates. United States: N. p., 1990. Web. doi:10.1063/1.104086.
Wang, Y H, Tai, K, Hsieh, Y F, Chu, S N.G., Wynn, J D, & Cho, A Y. Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates. United States. doi:10.1063/1.104086.
Wang, Y H, Tai, K, Hsieh, Y F, Chu, S N.G., Wynn, J D, and Cho, A Y. Mon . "Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates". United States. doi:10.1063/1.104086.
@article{osti_6289143,
title = {Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates},
author = {Wang, Y H and Tai, K and Hsieh, Y F and Chu, S N.G. and Wynn, J D and Cho, A Y},
abstractNote = {GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al{sub 0.1}Ga{sub 0.9}As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm{sup 2} were measured with an emission efficiency of 0.2 mW/mA.},
doi = {10.1063/1.104086},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 57:16,
place = {United States},
year = {1990},
month = {10}
}