Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates

Journal Article · Mon Oct 15 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104086· OSTI ID:6289143

Wang, Y H; Tai, K; Hsieh, Y F; Chu, S N.G.; Wynn, J D; Cho, A Y ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al{sub 0.1}Ga{sub 0.9}As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm{sup 2} were measured with an emission efficiency of 0.2 mW/mA.

• OSTI ID: 6289143
• Journal Information: Applied Physics Letters; (USA), Vol. 57:16; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
FABRICATION
GALLIUM ARSENIDES
LASER CAVITIES
MOLECULAR BEAM EPITAXY
QUANTUM EFFICIENCY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)