Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors
Abstract
Extremely sensitive gas sensors can be fabricated using heterostructures of the form metal-sensing layer-semiconductor or metal-sensing layer-metal. These structures are heterostructure diodes which have the barrier controlling transport at least partially located in the sensing layer. In the presence of the gas species to be detected, the electrical properties of the sensing layer evolve, resulting in a modification of the barrier to electric current transport and, hence, resulting in detection due to changes in the current-voltage characteristics of the device. This type of sensor structure is demonstrated using the Pd/Ti-O/sub x/Ti heterostructure hydrogen detector.
- Authors:
- Publication Date:
- Research Org.:
- Pennsylvania State Univ., University Park (USA)
- OSTI Identifier:
- 6284586
- Report Number(s):
- BNL-39910; CONF-871027-29
ON: DE87011293
- DOE Contract Number:
- AC02-76CH00016
- Resource Type:
- Conference
- Resource Relation:
- Conference: 172. meeting of the Electrochemical Society, Honolulu, HI, USA, 18 Oct 1987; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; GAS ANALYSIS; JUNCTION DIODES; HETEROJUNCTIONS; USES; EXPERIMENTAL DATA; FABRICATION; HYDROGEN; PALLADIUM; PERFORMANCE TESTING; SENSITIVITY; SILICON; TITANIUM; DATA; ELEMENTS; INFORMATION; JUNCTIONS; METALS; NONMETALS; NUMERICAL DATA; PLATINUM METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TESTING; TRANSITION ELEMENTS; 440300* - Miscellaneous Instruments- (-1989)
Citation Formats
O'Leary, M, Li, Zheng, and Fonash, S J. Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors. United States: N. p., 1987.
Web.
O'Leary, M, Li, Zheng, & Fonash, S J. Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors. United States.
O'Leary, M, Li, Zheng, and Fonash, S J. 1987.
"Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors". United States.
@article{osti_6284586,
title = {Metal-sensing layer-semiconductor and metal-sensing layer-metal heterostructure gas sensors},
author = {O'Leary, M and Li, Zheng and Fonash, S J},
abstractNote = {Extremely sensitive gas sensors can be fabricated using heterostructures of the form metal-sensing layer-semiconductor or metal-sensing layer-metal. These structures are heterostructure diodes which have the barrier controlling transport at least partially located in the sensing layer. In the presence of the gas species to be detected, the electrical properties of the sensing layer evolve, resulting in a modification of the barrier to electric current transport and, hence, resulting in detection due to changes in the current-voltage characteristics of the device. This type of sensor structure is demonstrated using the Pd/Ti-O/sub x/Ti heterostructure hydrogen detector.},
doi = {},
url = {https://www.osti.gov/biblio/6284586},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1987},
month = {Thu Jan 01 00:00:00 EST 1987}
}
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