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Title: Stress relaxation in Si-rich silicon nitride thin films

Abstract

Si-rich silicon nitride thin films have been deposited by low pressure chemical vapor deposition, at 850{degree}C from mixtures of dichlorosilane and ammonia. The films{close_quote} elastic properties have been studied as a function of film composition. Fourier transform infrared spectroscopy and ellipsometric data indicate that the local atomic strain is a strong function of the calculated volume fraction of Si contained in the films. A relationship is observed that shows the strain to be inversely proportional to the cube root of the Si volume fraction. A model that accounts for distortion in Si{endash}Si{sub x}N{sub 4{minus}x} tetrahedra (x=0{endash}4), upon substitution of silicon for nitrogen in the film is applied to the data. The model is shown to be consistent with measurements of intrinsic film stress across a compositional range from stoichiometric silicon nitride, Si{sub 3}N{sub 4}, to nitrogen-free amorphous silicon, a-Si. {copyright} {ital 1998 American Institute of Physics.}

Authors:
 [1]
  1. Sandia National Laboratories, P.O. Box 5800, M/S 1084, Albuquerque, New Mexico87185 (United States)
Publication Date:
OSTI Identifier:
627735
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 83; Journal Issue: 9; Other Information: PBD: May 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON COMPOUNDS; SILICON NITRIDES; THIN FILMS; STRESS RELAXATION; CHEMICAL VAPOR DEPOSITION; ELASTICITY; CHEMICAL COMPOSITION; INFRARED SPECTRA; ELLIPSOMETRY; STOICHIOMETRY

Citation Formats

Habermehl, S. Stress relaxation in Si-rich silicon nitride thin films. United States: N. p., 1998. Web. doi:10.1063/1.367253.
Habermehl, S. Stress relaxation in Si-rich silicon nitride thin films. United States. https://doi.org/10.1063/1.367253
Habermehl, S. Fri . "Stress relaxation in Si-rich silicon nitride thin films". United States. https://doi.org/10.1063/1.367253.
@article{osti_627735,
title = {Stress relaxation in Si-rich silicon nitride thin films},
author = {Habermehl, S},
abstractNote = {Si-rich silicon nitride thin films have been deposited by low pressure chemical vapor deposition, at 850{degree}C from mixtures of dichlorosilane and ammonia. The films{close_quote} elastic properties have been studied as a function of film composition. Fourier transform infrared spectroscopy and ellipsometric data indicate that the local atomic strain is a strong function of the calculated volume fraction of Si contained in the films. A relationship is observed that shows the strain to be inversely proportional to the cube root of the Si volume fraction. A model that accounts for distortion in Si{endash}Si{sub x}N{sub 4{minus}x} tetrahedra (x=0{endash}4), upon substitution of silicon for nitrogen in the film is applied to the data. The model is shown to be consistent with measurements of intrinsic film stress across a compositional range from stoichiometric silicon nitride, Si{sub 3}N{sub 4}, to nitrogen-free amorphous silicon, a-Si. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.367253},
url = {https://www.osti.gov/biblio/627735}, journal = {Journal of Applied Physics},
number = 9,
volume = 83,
place = {United States},
year = {1998},
month = {5}
}