Photoluminescent response of palladium-cadmium sulfide and palladium-graded cadmium sulfoselenide Schottky diodes to molecular hydrogen. Technical report

Technical Report · Thu Aug 15 00:00:00 EDT 1985

OSTI ID:6265683

Carpenter, M K; Van Ryswyk, H; Ellis, A B

The bulk photoluminescence (PL) of Schottky diodes constructed from Pd and n-type CdS (Pd-CdS) and from n-type, graded CdS/sub x/Se/sub 1-x/ (0 less than or equal to x less than or equal to 1; x - 1 at surface) (Pd-CdS/sub x/Se/sub 1-x/) is sensitive to molecular H/sub 2/. For the Pd-CdS diode, exposure to H2 (3:1, N/sub 2/:H/sub 2/ mixture) significantly enhances the PL intensity of edge emission lambda/sub max./approx. 510 nm) relative to the intensity in air; using a dead-layer model, the corresponding reductions in depletion width and Schottky barrier height can be estimated. For the Pd-CdS/sub x/Se/sub 1-x/ diodes, H/sub 2/ changes the spectral distribution; PL from this material, color-coded to spatially resolve e/sup -/-H/sup +/ pair recombination, indicates the depth over which the electric field is reduced in the semiconductor. These phenomena demonstrate optically-coupled chemical sensing of hydrogen.

• Research Organization: Wisconsin Univ., Madison (USA). Dept. of Chemistry
• OSTI ID: 6265683
• Report Number(s): AD-A-158759/1/XAB; UWIS/DC/TR-85/1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SELENIDES
PHOTOLUMINESCENCE
CADMIUM SULFIDES
HYDROGEN
PHOTOCHEMISTRY
PALLADIUM
SCHOTTKY BARRIER DIODES
ELECTRIC FIELDS
EMISSION
HEIGHT
LAYERS
MOLECULES
WIDTH
CADMIUM COMPOUNDS
CHALCOGENIDES
CHEMISTRY
DIMENSIONS
ELEMENTS
INORGANIC PHOSPHORS
LUMINESCENCE
METALS
NONMETALS
PHOSPHORS
PLATINUM METALS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENTS
360603* - Materials- Properties