A new high-density low-voltage SSIMOS EEPROM cell

Journal Article · Mon Apr 01 00:00:00 EST 1985 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1985.22017· OSTI ID:6258893

Ipri, A C; Cartwright, J M; Favaone, L; Schlesier, K; Stewart, P G

An efficient low-voltage EEPROM cell is described which occupies an area of 135 ..mu..m/sup 2/ when fabricated with 3-..mu..m CMOS technology. To charge and discharge the floating gate, the device relies on Fowler-Nordheim tunneling of electrons between the floating gate and a narrow window of the device channel region. The control gate is positioned so as to shield the remaining portion of the floating gate from the substrate. The cell can be programmed in 10 ms with a nominal WRITE voltage of 16 V and an ERASE voltage of 12 V. The WRITE/ERASE endurance of the cell is in excess of 10/sup 6/ cycles, and the data retention has been shown to be greater than 10 years at 125/sup 0/C.

• Research Organization: RCA Laboratores, David Sarnoff Research Center, Princeton, NJ
• OSTI ID: 6258893
• Journal Information: IEEE Trans. Electron Devices; (United States), Vol. ED-32:4
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
MOS SOLAR CELLS
COMPUTERIZED SIMULATION
DESIGN
FABRICATION
SILICON SOLAR CELLS
OPERATION
CAPACITY
CHARGE DENSITY
COMPUTER CODES
E CODES
ELECTRIC POTENTIAL
ELECTRON CHANNELING
ENERGY EFFICIENCY
FOWLER-NORDHEIM THEORY
PROGRAMMING
SUBSTRATES
SURFACE AREA
TRANSISTORS
CHANNELING
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR DEVICES
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE PROPERTIES
140501* - Solar Energy Conversion- Photovoltaic Conversion