Si{sub 3}N{sub 4} on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure
- Coordinated Science Laboratory and Material Research Laboratory---University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois61801 (United States)
Si{sub 3}N{sub 4} has been produced on GaAs with low interface trap densities by electron cyclotron resonance N{sub 2}{endash}He plasma assisted nitridation of a Si layer deposited on a GaAs (100) substrate. Nitridation at 150 and 400{degree}C was monitored by x-ray photoelectron spectroscopy (XPS) and produced stoichiometric Si{sub 3}N{sub 4}. The nitride layer thickness, as determined from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation time with a transition at a thickness of 12{endash}18 {Angstrom} to slower growth. Capacitance/voltage and conductance/angular frequency measurements were performed on metal-insulator-semiconductor capacitors fabricated from the nitrided samples. The results demonstrated interface trap densities with a minimum of 3.0{times}10{sup 11}eV{sup {minus}1}cm{sup {minus}2} when nitrided at 150{degree}C. At 400{degree}C the nitridation produced a poor quality interface, which resulted either from the higher temperature or from nitridation of all of the Si, leaving the Si{sub 3}N{sub 4} in direct contact with the GaAs. {copyright} {ital 1998 American Vacuum Society.}
- OSTI ID:
- 625835
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 16, Issue 2; Other Information: PBD: Mar 1998
- Country of Publication:
- United States
- Language:
- English
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