Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1/times/1)Bi

Journal Article · Thu Jun 15 00:00:00 EDT 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.12925· OSTI ID:6257520

McLean, A B; Feenstra, R M; Taleb-Ibrahimi, A; Ludeke, R

We report the structural and electronic properties of a new orderedBi(1/times/1) overlayer on cleaved GaAs(110) surfaces. Although somestructural similarities exist between the ordered Bi monolayer and that for Sb,our studies show the following novel features: a periodic one-dimensional arrayof misfit dislocations, which appear to generate acceptor states that ''pin''the Fermi level on /ital n/-type GaAs, and Bi-derived valence and conductionbands that extend into the GaAs band gap and are separated by 0.7 eV.

• Research Organization: IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598(US)
• OSTI ID: 6257520
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 39:17
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
SORPTIVE PROPERTIES
CRYSTAL STRUCTURE
DISLOCATIONS
EPITAXY
FERMI LEVEL
ORDER PARAMETERS
PHOTOELECTRON SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY LEVELS
GALLIUM COMPOUNDS
LINE DEFECTS
METALS
MICROSCOPY
PNICTIDES
SPECTROSCOPY
SURFACE PROPERTIES
360603* - Materials- Properties