Investigation of the influence of electron irradiation on the characteristics of gallium arsenide Schottky diodes

Journal Article · Sun Mar 01 00:00:00 EST 1981 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6256443

Vyatkin, A P; Dubinin, A V; Maksimova, N K; Filonov, N G

The current-voltage characteristics of Pd--GaAs diodes subjected to bombardment with high-energy electrons were investigated in a wide temperature range (77--400 /sup 0/K). Electron irradiation reduced the anisotropy of the height of the rectifying barrier of the various crystallographic surfaces of gallium arsenide, indicating that the irradiation affected the surface states at the Pd--GaAs interface. Introduction of deep levels associated with radiation defects altered the mechanism of carrier flow. Resonant tunneling effects could occur in Schottky-barrier diodes made of a material with a low dopant concentration.

• Research Organization: V. D. Kuznetsov Siberian Physicotechnical Scientic-Research Institute at the State University, Tomsk
• OSTI ID: 6256443
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 15:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
ANISOTROPY
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRON COLLISIONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
PALLADIUM
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
METALS
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS
360605* - Materials- Radiation Effects