Effects of transient and permanent optical confinement on the far-field radiation pattern from electron-beam-pumped semiconductor lasers

Journal Article · Tue May 01 00:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326387· OSTI ID:6255159

Gouin, F; Shewchun, J; Garside, B K

The dynamic behavior of electron-beam-pumped semiconductor lasers can change drastically depending on whether transient or permanent waveguiding predominates. Measurements of the far-field diffraction patterns at lasing threshold from GaAs bulk crystal and GaInAs heteroepitaxial layers of various thicknesses are reported. The refractive-index step at the interface between the epi-layer and the substrate due to the changes in material composition results in optical confinement of the laser radiation within the GaInAs layer. A theoretical model for such a laser cavity is introduced to investigate the dependence of the diffraction loss and the transverse distribution of the radiation on the cavity parameters. The effects of the confining surface decrease as it becomes less accessible to the laser radiation. The critical parameters are the thickness of the passive region, the optical losses in that same region, and the refractive-index difference between active and passive regions. The analysis permits the determination of the specific conditions under which the effects of the back-reflecting surface become negligible.

• Research Organization: Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4M1
• OSTI ID: 6255159
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
PERFORMANCE
CATHODOLUMINESCENCE
ELECTRON BEAMS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASER CAVITIES
LAYERS
THRESHOLD ENERGY
WAVEGUIDES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ENERGY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
LEPTON BEAMS
LUMINESCENCE
PARTICLE BEAMS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)