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Title: Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light

Abstract

We have used a combination of electron-beam-induced current (EBIC), etching, and optical measurements to show dramatic differences between the minority-carrier transport properties and defect structures in GaAs wafers from two different vendors. We found that the EBIC defects correspond to the traditional ones found with molten KOH etching and optical inspection. However, the EBIC micrographs give a great deal of additional information. The EBIC patterns from the first vendor's wafer showed diagonal striations and point defects that made the EBIC go to zero and were interconnected by wormlike lines. The second vendor's wafers showed EBIC point defects that only suppressed the response by 20% and gettered the surrounding material so that it had higher EBIC response. However, this second vendor's wafer had about a 15% overall lower EBIC response and a much higher density of surface polish defects identified by reflected light. Etching data showed that EBIC defects are bulk material properties and that electrochemical etching with a KOH electrolyte allows the wormlike defects to be seen optically in a Nomarski equipped microscope. Examination of epilayers showed that the wafer defects did not propagate up into a 4-..mu..m-thick layer grown by vacuum chemical epitaxy or a 1.5-..mu..m-thick layer grown bymore » molecular-beam epitaxy.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Chevron Research Company, Richmond, California 94802
OSTI Identifier:
6252160
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Appl. Phys.; (United States); Journal Volume: 62:10
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CHARGED-PARTICLE TRANSPORT; CRYSTAL DEFECTS; ELECTRON COLLISIONS; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTROLYTES; EPITAXY; ETCHING; POINT DEFECTS; POTASSIUM HYDROXIDES; SURFACE TREATMENTS; ALKALI METAL COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COLLISIONS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HYDROGEN COMPOUNDS; HYDROXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; POTASSIUM COMPOUNDS; RADIATION TRANSPORT; SURFACE FINISHING; 360603* - Materials- Properties; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Partain, L.D., Dean, S.M., Berard, B.L., McLeod, P.S., Fraas, L.M., Cape, J.A., and Sheldon, P. Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light. United States: N. p., 1987. Web. doi:10.1063/1.339098.
Partain, L.D., Dean, S.M., Berard, B.L., McLeod, P.S., Fraas, L.M., Cape, J.A., & Sheldon, P. Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light. United States. doi:10.1063/1.339098.
Partain, L.D., Dean, S.M., Berard, B.L., McLeod, P.S., Fraas, L.M., Cape, J.A., and Sheldon, P. Sun . "Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light". United States. doi:10.1063/1.339098.
@article{osti_6252160,
title = {Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light},
author = {Partain, L.D. and Dean, S.M. and Berard, B.L. and McLeod, P.S. and Fraas, L.M. and Cape, J.A. and Sheldon, P.},
abstractNote = {We have used a combination of electron-beam-induced current (EBIC), etching, and optical measurements to show dramatic differences between the minority-carrier transport properties and defect structures in GaAs wafers from two different vendors. We found that the EBIC defects correspond to the traditional ones found with molten KOH etching and optical inspection. However, the EBIC micrographs give a great deal of additional information. The EBIC patterns from the first vendor's wafer showed diagonal striations and point defects that made the EBIC go to zero and were interconnected by wormlike lines. The second vendor's wafers showed EBIC point defects that only suppressed the response by 20% and gettered the surrounding material so that it had higher EBIC response. However, this second vendor's wafer had about a 15% overall lower EBIC response and a much higher density of surface polish defects identified by reflected light. Etching data showed that EBIC defects are bulk material properties and that electrochemical etching with a KOH electrolyte allows the wormlike defects to be seen optically in a Nomarski equipped microscope. Examination of epilayers showed that the wafer defects did not propagate up into a 4-..mu..m-thick layer grown by vacuum chemical epitaxy or a 1.5-..mu..m-thick layer grown by molecular-beam epitaxy.},
doi = {10.1063/1.339098},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 62:10,
place = {United States},
year = {Sun Nov 15 00:00:00 EST 1987},
month = {Sun Nov 15 00:00:00 EST 1987}
}