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Title: Gettering of iron to implantation induced cavities and oxygen precipitates in silicon

Abstract

Iron gettering at both implantation-induced cavities and oxygen precipitates in silicon was experimentally measured and theoretically modeled. Since impurity removal from the near-surface region is crucial for proper integrated circuit device operation, these experiments strictly tested the viability of each mechanism to sufficient reduce the near-surface Fe concentration. Cavities and oxygen precipitates were formed by helium implantation in the near surface region and specific heat treatments, respectively. Low doses of intentionally introduced Fe were gettered with either a short rapid thermal anneal or a long furnace anneal, both at moderate temperatures. The Fe concentration was measured in the near surface region as well as in the cavities. The cavities were found to drastically reduce near-surface Fe concentrations for both anneals while the oxygen precipitates were only fairly effective for long furnace anneals. Furthermore, for samples with both cavities and oxygen precipitates, the gettering of Fe was only slightly enhanced over samples with only cavities. The experimental results were supported by a semiquantitative agreement with modeling based on previously derived theoretical formalisms. These experimental results clearly show an increased gettering effectiveness of implantation-induced cavities over oxygen precipitates for impurity removal from the near-surface region.

Authors:
;  [1]; ;  [2]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering
  2. Sandia National Labs., Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Laboratory
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
624310
DOE Contract Number:  
AC04-94AL85000; AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 145; Journal Issue: 4; Other Information: PBD: Apr 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON; INTEGRATED CIRCUITS; CRYSTAL DEFECTS; GETTERING; IRON; ION IMPLANTATION

Citation Formats

McHugo, S A, Weber, E R, Myers, S M, and Petersen, G A. Gettering of iron to implantation induced cavities and oxygen precipitates in silicon. United States: N. p., 1998. Web. doi:10.1149/1.1838472.
McHugo, S A, Weber, E R, Myers, S M, & Petersen, G A. Gettering of iron to implantation induced cavities and oxygen precipitates in silicon. United States. doi:10.1149/1.1838472.
McHugo, S A, Weber, E R, Myers, S M, and Petersen, G A. Wed . "Gettering of iron to implantation induced cavities and oxygen precipitates in silicon". United States. doi:10.1149/1.1838472.
@article{osti_624310,
title = {Gettering of iron to implantation induced cavities and oxygen precipitates in silicon},
author = {McHugo, S A and Weber, E R and Myers, S M and Petersen, G A},
abstractNote = {Iron gettering at both implantation-induced cavities and oxygen precipitates in silicon was experimentally measured and theoretically modeled. Since impurity removal from the near-surface region is crucial for proper integrated circuit device operation, these experiments strictly tested the viability of each mechanism to sufficient reduce the near-surface Fe concentration. Cavities and oxygen precipitates were formed by helium implantation in the near surface region and specific heat treatments, respectively. Low doses of intentionally introduced Fe were gettered with either a short rapid thermal anneal or a long furnace anneal, both at moderate temperatures. The Fe concentration was measured in the near surface region as well as in the cavities. The cavities were found to drastically reduce near-surface Fe concentrations for both anneals while the oxygen precipitates were only fairly effective for long furnace anneals. Furthermore, for samples with both cavities and oxygen precipitates, the gettering of Fe was only slightly enhanced over samples with only cavities. The experimental results were supported by a semiquantitative agreement with modeling based on previously derived theoretical formalisms. These experimental results clearly show an increased gettering effectiveness of implantation-induced cavities over oxygen precipitates for impurity removal from the near-surface region.},
doi = {10.1149/1.1838472},
journal = {Journal of the Electrochemical Society},
number = 4,
volume = 145,
place = {United States},
year = {1998},
month = {4}
}