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Title: XPS: A multi-channel preamplifier-shaper IC for X-ray spectroscopy

Abstract

An integrated circuit featuring 48 channels of charge-sensitive preamplifiers followed by variable-gain pulse shaping amplifiers is being developed as part of an x-ray spectrometer with a highly segmented detector to handle high fluxes in synchrotron experiments. Such detector systems can provide excellent energy resolution combined with one-dimensional spatial information. The IC combines many basic spectroscopy amplifier functions with a low-noise preamplifier section to produce a unique circuit capable of driving conventional ADC modules directly. An important feature of the design is the novel CR-RC{sup 2} pulse shaper. In this section, high-linearity transconductor circuits are required in order to provide a broad range of continuously variable peaking times while still maintaining the linearity and noise performance necessary for x-ray spectroscopy. Reported here are first measurements made on the performance of a 16-channel prototype integrated circuit. At present, the preamplifier-shaper circuit achieves an equivalent input noise of 26 electrons rms at 2 {micro}s peaking time with a 0.2 pF external capacitor, which is similar to the capacitance of a single detector element. The design was fabricated in standard 1.2 {micro}m CMOS technology.

Authors:
;  [1];  [2]
  1. Lawrence Berkeley National Lab., CA (United States)
  2. Hewlett-Packard Co., Newark, CA (United States)
Publication Date:
OSTI Identifier:
624211
Report Number(s):
CONF-971147-
Journal ID: IETNAE; ISSN 0018-9499; TRN: 98:006464
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 45; Journal Issue: 3Pt1; Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Albuquerque, NM (United States), 11-13 Nov 1997; Other Information: PBD: Jun 1998
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; INTEGRATED CIRCUITS; X-RAY SPECTROMETERS; PREAMPLIFIERS; PULSE SHAPERS; ANALOG-TO-DIGITAL CONVERTERS; PERFORMANCE; DESIGN

Citation Formats

Krieger, B, Ludewigt, B A, and Kipnis, I. XPS: A multi-channel preamplifier-shaper IC for X-ray spectroscopy. United States: N. p., 1998. Web. doi:10.1109/23.682625.
Krieger, B, Ludewigt, B A, & Kipnis, I. XPS: A multi-channel preamplifier-shaper IC for X-ray spectroscopy. United States. https://doi.org/10.1109/23.682625
Krieger, B, Ludewigt, B A, and Kipnis, I. 1998. "XPS: A multi-channel preamplifier-shaper IC for X-ray spectroscopy". United States. https://doi.org/10.1109/23.682625.
@article{osti_624211,
title = {XPS: A multi-channel preamplifier-shaper IC for X-ray spectroscopy},
author = {Krieger, B and Ludewigt, B A and Kipnis, I},
abstractNote = {An integrated circuit featuring 48 channels of charge-sensitive preamplifiers followed by variable-gain pulse shaping amplifiers is being developed as part of an x-ray spectrometer with a highly segmented detector to handle high fluxes in synchrotron experiments. Such detector systems can provide excellent energy resolution combined with one-dimensional spatial information. The IC combines many basic spectroscopy amplifier functions with a low-noise preamplifier section to produce a unique circuit capable of driving conventional ADC modules directly. An important feature of the design is the novel CR-RC{sup 2} pulse shaper. In this section, high-linearity transconductor circuits are required in order to provide a broad range of continuously variable peaking times while still maintaining the linearity and noise performance necessary for x-ray spectroscopy. Reported here are first measurements made on the performance of a 16-channel prototype integrated circuit. At present, the preamplifier-shaper circuit achieves an equivalent input noise of 26 electrons rms at 2 {micro}s peaking time with a 0.2 pF external capacitor, which is similar to the capacitance of a single detector element. The design was fabricated in standard 1.2 {micro}m CMOS technology.},
doi = {10.1109/23.682625},
url = {https://www.osti.gov/biblio/624211}, journal = {IEEE Transactions on Nuclear Science},
number = 3Pt1,
volume = 45,
place = {United States},
year = {1998},
month = {6}
}