Relation between current-voltage characteristics and interface states at metal-semiconductor interfaces

Journal Article · Sun May 15 00:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93777· OSTI ID:6230036

Barret, C; Muret, P

In the case of metal-covalent semiconductor interfaces, the ''pinning'' of the metal Fermi level was attributed to large densities of interface states by Bardeen, 35 years ago. These interface states are usually thought to be in equilibrium with the metal. But capacitance measurements show unambiguously the existence of states in equilibrium with the semiconductor, even for cleaved contacts. Freeouf argued recently that this kind of states would influence I-V characteristics. Here, some examples of such a correlation between interface states spectra and I-V nonidealities are presented for Au-InP and Au-Si contacts.

• Research Organization: Institut d'Electronique Fondamentale, Universite Paris-Sud, Bat. 220, 91405 Orsay Cedex, France
• OSTI ID: 6230036
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 42:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GOLD
ELECTRICAL PROPERTIES
INTERFACES
INDIUM PHOSPHIDES
SILICON
CAPACITORS
ELECTRIC CONTACTS
ENERGY LEVELS
EQUILIBRIUM
EXPERIMENTAL DATA
FERMI LEVEL
MATHEMATICAL MODELS
METALS
SEMICONDUCTOR MATERIALS
DATA
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
INDIUM COMPOUNDS
INFORMATION
MATERIALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
TRANSITION ELEMENTS
360603* - Materials- Properties