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Title: GaN Device Processing

Abstract

Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is minimized and AlN encapsulation prevents GaN surface decomposition. Implant isolation is effective in GaN, AlGaN and AlInN, but marginal in InGaN. Candidate gate insulators for GaN include AlN, AlON and Ga(Gd)O(x), but interface state densities are still to high to realize state-of-the-art MIS devices.

Authors:
 [1];  [2];  [3];  [4]
  1. University of Florida, Gainesville, FL (United States)
  2. Bell Laboratories, Lucent Technologies, Murray Hill, NJ (United States)
  3. Office of Naval Research, Arlington, VA (United States)
  4. Sandia National Labs., Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Management and Administration, Washington, DC (United States); USDOE Office of Financial Management and Controller, Washington, DC (United States)
OSTI Identifier:
622943
Report Number(s):
SAND-98-0132C; CONF-971201-
ON: DE98002578; TRN: AD-a339 555
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: Jan 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 36 MATERIALS SCIENCE; GALLIUM NITRIDES; FABRICATION; THERMODYNAMIC PROPERTIES; IONS; DENSITY; INTERFACES; TEMPERATURE RANGE 0400-1000 K; ELECTRICAL INSULATION; GATING CIRCUITS; ETCHING; MOISTURE; SURFACES; OXIDES; ALUMINIUM; CHLORIDES; ENCAPSULATION; CRYSTAL DOPING; N-TYPE CONDUCTORS; ANNEALING; ARGON; GADOLINIUM; DECOMPOSITION; INDIUM; ION IMPLANTATION; ELECTRIC CONTACTS; ALUMINIUM NITRIDES; INDIUM NITRIDES; GALLIUM OXIDES; GADOLINIUM OXIDES; GATE INSULATOR TECHNOLOGY; INDUCTIVELY COUPLED PLASMAS; MIS(METAL INSULATOR SEMICONDUCTOR)

Citation Formats

Pearton, S.J., Ren, F., Zolper, J.C., and Shul, R.J. GaN Device Processing. United States: N. p., 1998. Web.
Pearton, S.J., Ren, F., Zolper, J.C., & Shul, R.J. GaN Device Processing. United States.
Pearton, S.J., Ren, F., Zolper, J.C., and Shul, R.J. Thu . "GaN Device Processing". United States. doi:. https://www.osti.gov/servlets/purl/622943.
@article{osti_622943,
title = {GaN Device Processing},
author = {Pearton, S.J. and Ren, F. and Zolper, J.C. and Shul, R.J.},
abstractNote = {Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is minimized and AlN encapsulation prevents GaN surface decomposition. Implant isolation is effective in GaN, AlGaN and AlInN, but marginal in InGaN. Candidate gate insulators for GaN include AlN, AlON and Ga(Gd)O(x), but interface state densities are still to high to realize state-of-the-art MIS devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}

Conference:
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