Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process
In order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa2Cu307+) coated conductors, Yb203 has been chosen as the candidate material. Buffer layers of fi03 were epitaxkdly grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The ~03 precursor solution was prepared from an alkoxide sol-gel route in 2-xnetho~ethanol and was deposited on textured-Ni (100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160oC under flowing (96%)MH2(4%) gas mixture for one hour. The fi03 iihn exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans indicated good in plane and out of plane orientations. The X-ray (222) pde figure showed a cube-on-cube epitaxy. High current YBCO films were grown on the Y&03 sol-gel buffered-Ni substrates.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge, TN
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 6225
- Report Number(s):
- ORNL/CP-102590; KC 02 03 01; EB 50 01 00 0; ON: DE00006225
- Resource Relation:
- Conference: Spring Meeting of the Materials Research Society, San Francisco, CA, April 5-9, 1999
- Country of Publication:
- United States
- Language:
- English
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