The thin film reactions--Mg/sub 2/Si and VSi/sub 2/

Journal Article · Fri Jun 01 00:00:00 EDT 1984 · Acta Metall.; (United States)

DOI:https://doi.org/10.1016/0001-6160(84)90028-2· OSTI ID:6216796

Lim, B S; Stark, J P

Subsequent to the deposition and annealing of either V or Mg on Si, the reaction to form VSi/sub 2/ or Mg/sub 2/Si was analyzed using X-ray diffraction to detect compound formation, AES to locate the two silicide interfaces, and SIMS to follow the diffusive separation of the natural abundance of Mg isotopes in the compound. The SIMS data show that the more massive Mg isotopes are found further from the Mg/Mg/sub 2/Si interface. Such an observation is consistent with Mg being the mobile isotope and grain boundary diffusion the dominant kinetic mechanism of film growth. Silicon isotope separation was not found for either reaction; however, silicon is not mobile in Mg/sub 2/Si formation so separation is not expected. The thickening kinetics for both reactions is parabolic.

• Research Organization: Materials Science Laboratory, Center for Materials Science and Engineering, The University of Texas, Austin, TX
• OSTI ID: 6216796
• Journal Information: Acta Metall.; (United States), Vol. 32:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MAGNESIUM SILICIDES
ANNEALING
DEPOSITION
SILICON
CHEMICAL REACTION KINETICS
FABRICATION
VANADIUM SILICIDES
AUGER ELECTRON SPECTROSCOPY
CRYSTAL GROWTH
GRAIN BOUNDARIES
INTERFACES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
X-RAY DIFFRACTION
ALKALINE EARTH METAL COMPOUNDS
CHEMICAL ANALYSIS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
HEAT TREATMENTS
KINETICS
MAGNESIUM COMPOUNDS
MICROANALYSIS
MICROSTRUCTURE
NONDESTRUCTIVE ANALYSIS
REACTION KINETICS
SCATTERING
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies