skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion implantation induced damage in relaxed Si{sub 1-x}Ge{sub x}

Abstract

Relaxed Si{sub 1-x}Ge{sub x} layers with germanium contents of 0.04, 0.13, 0.24 and 0.36 have been grown by MBE and implanted under tightly controlled conditions with 2 MeV Si{sup +} ions over the dose range 1 {times} 10{sup 10} to 5 {times} 10{sup 15} Si{sup +} cm{sup -2}. The introduction rate and characteristics of simple defects have been investigated by EPR and DLTS whilst the accumulation of this damage with increasing dose has been followed by RBS, XTEM and optical depth profiling up to the onset of amorphisation. It is found that the integrated damage increases whilst the critical dose for amorphisation decreases with increasing Ge content.

Authors:
;  [1];  [2]
  1. Trinity College, Dublin (Ireland)
  2. Univ. of Aarhus (Denmark); and others
Publication Date:
OSTI Identifier:
621314
Report Number(s):
CONF-9606110-
TRN: 98:002114-0057
Resource Type:
Conference
Resource Relation:
Conference: 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Ion implantation technology - 96; Ishida, E.; Banerjee, S.; Mehta, S. [eds.] [and others]; PB: 859 p.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LAYERS; GERMANIUM ALLOYS; SILICON; CRYSTAL DEFECTS; ION IMPLANTATION; SILICON IONS

Citation Formats

Barklie, R C, O`Raifeartaigh, C, and Nylandsted-Larsen, A. Ion implantation induced damage in relaxed Si{sub 1-x}Ge{sub x}. United States: N. p., 1996. Web.
Barklie, R C, O`Raifeartaigh, C, & Nylandsted-Larsen, A. Ion implantation induced damage in relaxed Si{sub 1-x}Ge{sub x}. United States.
Barklie, R C, O`Raifeartaigh, C, and Nylandsted-Larsen, A. Tue . "Ion implantation induced damage in relaxed Si{sub 1-x}Ge{sub x}". United States.
@article{osti_621314,
title = {Ion implantation induced damage in relaxed Si{sub 1-x}Ge{sub x}},
author = {Barklie, R C and O`Raifeartaigh, C and Nylandsted-Larsen, A},
abstractNote = {Relaxed Si{sub 1-x}Ge{sub x} layers with germanium contents of 0.04, 0.13, 0.24 and 0.36 have been grown by MBE and implanted under tightly controlled conditions with 2 MeV Si{sup +} ions over the dose range 1 {times} 10{sup 10} to 5 {times} 10{sup 15} Si{sup +} cm{sup -2}. The introduction rate and characteristics of simple defects have been investigated by EPR and DLTS whilst the accumulation of this damage with increasing dose has been followed by RBS, XTEM and optical depth profiling up to the onset of amorphisation. It is found that the integrated damage increases whilst the critical dose for amorphisation decreases with increasing Ge content.},
doi = {},
url = {https://www.osti.gov/biblio/621314}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: